Stark Shift from Quantum Defects in Hexagonal Boron Nitride

Fuente: arXiv
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Hauptverfasser: Li, Pei, Xu, Ran, Huang, Bing, Li, Song
Format: Preprint
Veröffentlicht: 2025
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author Li, Pei
Xu, Ran
Huang, Bing
Li, Song
author_facet Li, Pei
Xu, Ran
Huang, Bing
Li, Song
contents Color centers in hexagonal boron nitride have emerged as promising candidates for quantum information applications, owing to their efficient and bright single photon emission. Despite the challenges in directly characterizing these emitters, the interaction between external fields and defects, such as the Stark shift, offers valuable insights into their local geometric configurations. In this study, we focus on clarifying the possible origin of the distinct Stark shift characteristics observed experimentally, particularly in the emission range around 2 eV. We find that the local symmetry of the defects plays a crucial role in determining the nature of the Stark shift, which can be either linear or quadratic. Additionally, the local dielectric environment significantly influences the Stark shift response. Our calculations not only enhance the understanding of the micro-structure of these hitherto unknown emitters but also pave the way for their more effective utilization as single-photon sources and qubits in quantum technologies.
format Preprint
id arxiv_https___arxiv_org_abs_2502_05490
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Stark Shift from Quantum Defects in Hexagonal Boron Nitride
Li, Pei
Xu, Ran
Huang, Bing
Li, Song
Materials Science
Quantum Physics
Color centers in hexagonal boron nitride have emerged as promising candidates for quantum information applications, owing to their efficient and bright single photon emission. Despite the challenges in directly characterizing these emitters, the interaction between external fields and defects, such as the Stark shift, offers valuable insights into their local geometric configurations. In this study, we focus on clarifying the possible origin of the distinct Stark shift characteristics observed experimentally, particularly in the emission range around 2 eV. We find that the local symmetry of the defects plays a crucial role in determining the nature of the Stark shift, which can be either linear or quadratic. Additionally, the local dielectric environment significantly influences the Stark shift response. Our calculations not only enhance the understanding of the micro-structure of these hitherto unknown emitters but also pave the way for their more effective utilization as single-photon sources and qubits in quantum technologies.
title Stark Shift from Quantum Defects in Hexagonal Boron Nitride
topic Materials Science
Quantum Physics
url https://arxiv.org/abs/2502.05490