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Autori principali: Chen, Zhuo, Yuan, Yuejin, Ding, Wenyang, Li, Shouhang, An, Meng, Zhang, Gang
Natura: Preprint
Pubblicazione: 2025
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Accesso online:https://arxiv.org/abs/2502.05580
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author Chen, Zhuo
Yuan, Yuejin
Ding, Wenyang
Li, Shouhang
An, Meng
Zhang, Gang
author_facet Chen, Zhuo
Yuan, Yuejin
Ding, Wenyang
Li, Shouhang
An, Meng
Zhang, Gang
contents As a representative of wide-bandgap semiconductors, wurtzite gallium nitride (GaN) has been widely utilized in high-power devices due to high breakdown voltage and low specific on resistance. Accurate prediction of wurtzite GaN thermal conductivity is a prerequisite for designing effective thermal management systems of electronic applications. Machine learning driven molecular dynamics simulation offers a promising approach to predicting the thermal conductivity of large-scale systems without requiring predefined parameters. However, these methods often underestimate the thermal conductivity of materials with inherently high thermal conductivity due to the large predicted force error compared with first-principle calculation, posing a critical challenge for their broader application. In this study, we successfully developed a neuroevolution potential for wurtzite GaN and accurately predicted its thermal conductivity, 259 W/m-K at room temperatue, achieving excellent agreement with reported experimental measurements. The hyperparameters of neuroevolution potential (NEP) were optimized based on systematic analysis of reproduced energy and force, structural feature, computational efficiency. Furthermore, a force prediction error correction method was implemented, effectively reducing the error caused by the additional force noise in the Langevin thermostat by extrapolating to the zero-force error limit. This study provides valuable insights and hold significant implication for advancing efficient thermal management technologies in wide bandgap semiconductor devices.
format Preprint
id arxiv_https___arxiv_org_abs_2502_05580
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Hyperparameter Optimization and Force Error Correction of Neuroevolution Potential for Predicting Thermal Conductivity of Wurtzite GaN
Chen, Zhuo
Yuan, Yuejin
Ding, Wenyang
Li, Shouhang
An, Meng
Zhang, Gang
Materials Science
Mesoscale and Nanoscale Physics
As a representative of wide-bandgap semiconductors, wurtzite gallium nitride (GaN) has been widely utilized in high-power devices due to high breakdown voltage and low specific on resistance. Accurate prediction of wurtzite GaN thermal conductivity is a prerequisite for designing effective thermal management systems of electronic applications. Machine learning driven molecular dynamics simulation offers a promising approach to predicting the thermal conductivity of large-scale systems without requiring predefined parameters. However, these methods often underestimate the thermal conductivity of materials with inherently high thermal conductivity due to the large predicted force error compared with first-principle calculation, posing a critical challenge for their broader application. In this study, we successfully developed a neuroevolution potential for wurtzite GaN and accurately predicted its thermal conductivity, 259 W/m-K at room temperatue, achieving excellent agreement with reported experimental measurements. The hyperparameters of neuroevolution potential (NEP) were optimized based on systematic analysis of reproduced energy and force, structural feature, computational efficiency. Furthermore, a force prediction error correction method was implemented, effectively reducing the error caused by the additional force noise in the Langevin thermostat by extrapolating to the zero-force error limit. This study provides valuable insights and hold significant implication for advancing efficient thermal management technologies in wide bandgap semiconductor devices.
title Hyperparameter Optimization and Force Error Correction of Neuroevolution Potential for Predicting Thermal Conductivity of Wurtzite GaN
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2502.05580