Electric field control of nonlinear Hall effect in Weyl semimetal TaIrTe4

Fuente: arXiv
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Hauptverfasser: Yang, Jiaju, Wei, Lujun, Li, Yanghui, Chen, Lina, Niu, Wei, Wang, Shuo, Li, Feng, Liu, Ping, Zhou, Shuang, Pu, Yong
Format: Preprint
Veröffentlicht: 2025
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author Yang, Jiaju
Wei, Lujun
Li, Yanghui
Chen, Lina
Niu, Wei
Wang, Shuo
Li, Feng
Liu, Ping
Zhou, Shuang
Pu, Yong
author_facet Yang, Jiaju
Wei, Lujun
Li, Yanghui
Chen, Lina
Niu, Wei
Wang, Shuo
Li, Feng
Liu, Ping
Zhou, Shuang
Pu, Yong
contents The nonlinear Hall effect (NLHE), as an important probe to reveal the symmetry breaking in topological properties of materials, opens up a new dimension for exploring the energy band structure and electron transport mechanism of quantum materials. Current studies mainly focus on the observation of material intrinsic the NLHE or inducing the NLHE response by artificially constructing corrugated/twisted twodimensionalmaterial systems. Notably, the modulation of NLHE signal strength, a core parameter of device performance, has attracted much attention, while theoretical predictions suggest that an applied electric field can achieve the NLHE enhancement through modulation of the Berry curvature dipole (BCD). Here we report effective modulation the magnitude and sign of the NLHE by applying additional constant electric fields of different directions and magnitudes in the semimetal TaIrTe4. The NLHE response strength is enhanced by 168 times compared to the intrinsic one at 4 K when the additional constant electric field of -0.5 kV/cm is applied to the b-axis of TaIrTe4 and the through a.c. current is parallel to the TaIrTe4 a-axis. Scaling law analysis suggests that the enhancement may be the result of the combined effect of the electric field on the intrinsic BCD and disorder scattering effect of TaIrTe4. This work provides a means to study the properties of TaIrTe4, as well as a valuable reference for the study of novel electronic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2502_05960
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Electric field control of nonlinear Hall effect in Weyl semimetal TaIrTe4
Yang, Jiaju
Wei, Lujun
Li, Yanghui
Chen, Lina
Niu, Wei
Wang, Shuo
Li, Feng
Liu, Ping
Zhou, Shuang
Pu, Yong
Materials Science
The nonlinear Hall effect (NLHE), as an important probe to reveal the symmetry breaking in topological properties of materials, opens up a new dimension for exploring the energy band structure and electron transport mechanism of quantum materials. Current studies mainly focus on the observation of material intrinsic the NLHE or inducing the NLHE response by artificially constructing corrugated/twisted twodimensionalmaterial systems. Notably, the modulation of NLHE signal strength, a core parameter of device performance, has attracted much attention, while theoretical predictions suggest that an applied electric field can achieve the NLHE enhancement through modulation of the Berry curvature dipole (BCD). Here we report effective modulation the magnitude and sign of the NLHE by applying additional constant electric fields of different directions and magnitudes in the semimetal TaIrTe4. The NLHE response strength is enhanced by 168 times compared to the intrinsic one at 4 K when the additional constant electric field of -0.5 kV/cm is applied to the b-axis of TaIrTe4 and the through a.c. current is parallel to the TaIrTe4 a-axis. Scaling law analysis suggests that the enhancement may be the result of the combined effect of the electric field on the intrinsic BCD and disorder scattering effect of TaIrTe4. This work provides a means to study the properties of TaIrTe4, as well as a valuable reference for the study of novel electronic devices.
title Electric field control of nonlinear Hall effect in Weyl semimetal TaIrTe4
topic Materials Science
url https://arxiv.org/abs/2502.05960