Ultralow-loss photonic integrated chips on 8-inch anomalous-dispersion Si$_3$N$_4$-SiO$_2$-Si Wafer
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arXiv
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| Autores principales: | , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866909485602177024 |
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| author | Liu, Shuai Puckett, Matthew W. Wu, Jianfeng Hariri, Abdulkarim Zhang, Yuheng Zhang, Zheshen |
| author_facet | Liu, Shuai Puckett, Matthew W. Wu, Jianfeng Hariri, Abdulkarim Zhang, Yuheng Zhang, Zheshen |
| contents | We report the fabrication of 8-inch crack-free, dispersion-engineered Si$_3$N$_4$-SiO$_2$-Si wafers fully compatible with industrial foundry silicon photonics fabrication lines. By combining these wafers with a developed amorphous silicon (a-Si) hardmask etching technique, we achieve ultra-low-loss Si$_3$N$_4$ photonic integrated circuits (PICs) with intrinsic quality factors exceeding $25 \times 10^6$ using electron beam lithography and $24 \times 10^6$ using standard ultraviolet stepper photolithography. Frequency-comb generation is demonstrated on these high-quality Si$_3$N$_4$ PICs, corroborating the designed anomalous dispersion. These results establish the feasibility of mass-manufacturing high-performance, dispersion-engineered Si$_3$N$_4$ PICs using standard foundry-grade processes, opening new pathways for applications in optical communications, nonlinear optics, and quantum optics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_05997 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ultralow-loss photonic integrated chips on 8-inch anomalous-dispersion Si$_3$N$_4$-SiO$_2$-Si Wafer Liu, Shuai Puckett, Matthew W. Wu, Jianfeng Hariri, Abdulkarim Zhang, Yuheng Zhang, Zheshen Optics Applied Physics We report the fabrication of 8-inch crack-free, dispersion-engineered Si$_3$N$_4$-SiO$_2$-Si wafers fully compatible with industrial foundry silicon photonics fabrication lines. By combining these wafers with a developed amorphous silicon (a-Si) hardmask etching technique, we achieve ultra-low-loss Si$_3$N$_4$ photonic integrated circuits (PICs) with intrinsic quality factors exceeding $25 \times 10^6$ using electron beam lithography and $24 \times 10^6$ using standard ultraviolet stepper photolithography. Frequency-comb generation is demonstrated on these high-quality Si$_3$N$_4$ PICs, corroborating the designed anomalous dispersion. These results establish the feasibility of mass-manufacturing high-performance, dispersion-engineered Si$_3$N$_4$ PICs using standard foundry-grade processes, opening new pathways for applications in optical communications, nonlinear optics, and quantum optics. |
| title | Ultralow-loss photonic integrated chips on 8-inch anomalous-dispersion Si$_3$N$_4$-SiO$_2$-Si Wafer |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2502.05997 |