Resonant spin amplification and accumulation in MAPbI$_3$ single crystals

Fuente: arXiv
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Auteurs principaux: Kirstein, Erik, Yakovlev, Dmitri R., Zhukov, Evgeny A., Kopteva, Nataliia E., Turedi, Bekir, Kovalenko, Maksym V., Bayer, Manfred
Format: Preprint
Publié: 2025
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author Kirstein, Erik
Yakovlev, Dmitri R.
Zhukov, Evgeny A.
Kopteva, Nataliia E.
Turedi, Bekir
Kovalenko, Maksym V.
Bayer, Manfred
author_facet Kirstein, Erik
Yakovlev, Dmitri R.
Zhukov, Evgeny A.
Kopteva, Nataliia E.
Turedi, Bekir
Kovalenko, Maksym V.
Bayer, Manfred
contents Quantum technologic and spintronic applications require reliable semiconducting materials that enable a significant, long-living spin polarization of electronic excitations and offer the ability to manipulate it optically in an external field. Due to the specifics of band structure and remarkable spin-dependent properties, the lead halide perovskite semiconductors are suitable candidates for that. Here, the carrier spin dynamics in a MAPbI$_3$ (MA = methylammonium) perovskite single crystal with thickness of 20 $μ$m are studied by the time-resolved Kerr ellipticity technique at cryogenic temperatures. Long times of longitudinal electron spin relaxation $T_1 = 30$ ns and transverse electron spin dephasing $T_{2,e}^*=21$ ns are found. The spin dynamics lasting longer than the applied laser pulse repetition period give rise to spin accumulation effects. We exploit them through the resonant spin amplification, polarization recovery, and spin inertia techniques to study the electron and hole spin systems coupled with the nuclear spins. These results establish the lead halide perovskite semiconductors as suitable platform for quantum technologies relying on spin-dependent phenomena.
format Preprint
id arxiv_https___arxiv_org_abs_2502_06495
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Resonant spin amplification and accumulation in MAPbI$_3$ single crystals
Kirstein, Erik
Yakovlev, Dmitri R.
Zhukov, Evgeny A.
Kopteva, Nataliia E.
Turedi, Bekir
Kovalenko, Maksym V.
Bayer, Manfred
Materials Science
Quantum technologic and spintronic applications require reliable semiconducting materials that enable a significant, long-living spin polarization of electronic excitations and offer the ability to manipulate it optically in an external field. Due to the specifics of band structure and remarkable spin-dependent properties, the lead halide perovskite semiconductors are suitable candidates for that. Here, the carrier spin dynamics in a MAPbI$_3$ (MA = methylammonium) perovskite single crystal with thickness of 20 $μ$m are studied by the time-resolved Kerr ellipticity technique at cryogenic temperatures. Long times of longitudinal electron spin relaxation $T_1 = 30$ ns and transverse electron spin dephasing $T_{2,e}^*=21$ ns are found. The spin dynamics lasting longer than the applied laser pulse repetition period give rise to spin accumulation effects. We exploit them through the resonant spin amplification, polarization recovery, and spin inertia techniques to study the electron and hole spin systems coupled with the nuclear spins. These results establish the lead halide perovskite semiconductors as suitable platform for quantum technologies relying on spin-dependent phenomena.
title Resonant spin amplification and accumulation in MAPbI$_3$ single crystals
topic Materials Science
url https://arxiv.org/abs/2502.06495