The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology

Fuente: arXiv
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Autores principales: Daza, Sara Ruiz, Ballabriga, Rafael, Buschmann, Eric, Campbell, Michael, Mohr, Raimon Casanova, Dannheim, Dominik, Dilg, Jona, Dorda, Ana, King, Finn, Feyens, Ono, Gadow, Philipp, Gregor, Ingrid-Maria, Hansen, Karsten, He, Yajun, Huth, Lennart, Kremastiotis, Iraklis, Lemoine, Corentin, Maffessanti, Stefano, Mendes, Larissa, Otarid, Younes, Reckleben, Christian, Rettie, Sébastien, Viera, Manuel Alejandro del Rio, Schlaadt, Judith, Simancas, Adriana, Snoeys, Walter, Spannagel, Simon, Vanat, Tomas, Velyka, Anastasiia, Vignola, Gianpiero, Wennlöf, Håkan
Formato: Preprint
Publicado: 2025
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author Daza, Sara Ruiz
Ballabriga, Rafael
Buschmann, Eric
Campbell, Michael
Mohr, Raimon Casanova
Dannheim, Dominik
Dilg, Jona
Dorda, Ana
King, Finn
Feyens, Ono
Gadow, Philipp
Gregor, Ingrid-Maria
Hansen, Karsten
He, Yajun
Huth, Lennart
Kremastiotis, Iraklis
Lemoine, Corentin
Maffessanti, Stefano
Mendes, Larissa
Otarid, Younes
Reckleben, Christian
Rettie, Sébastien
Viera, Manuel Alejandro del Rio
Schlaadt, Judith
Simancas, Adriana
Snoeys, Walter
Spannagel, Simon
Vanat, Tomas
Velyka, Anastasiia
Vignola, Gianpiero
Wennlöf, Håkan
author_facet Daza, Sara Ruiz
Ballabriga, Rafael
Buschmann, Eric
Campbell, Michael
Mohr, Raimon Casanova
Dannheim, Dominik
Dilg, Jona
Dorda, Ana
King, Finn
Feyens, Ono
Gadow, Philipp
Gregor, Ingrid-Maria
Hansen, Karsten
He, Yajun
Huth, Lennart
Kremastiotis, Iraklis
Lemoine, Corentin
Maffessanti, Stefano
Mendes, Larissa
Otarid, Younes
Reckleben, Christian
Rettie, Sébastien
Viera, Manuel Alejandro del Rio
Schlaadt, Judith
Simancas, Adriana
Snoeys, Walter
Spannagel, Simon
Vanat, Tomas
Velyka, Anastasiia
Vignola, Gianpiero
Wennlöf, Håkan
contents The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflow and ports a hybrid pixel-detector architecture, with digital pulse processing in each pixel, into a monolithic chip. The chip matrix consists of 64$\times$16 square pixels with a size of 35$\times$35 um2, and a total active area of approximately 1.25 um2. The chip has been successfully integrated into the Caribou DAQ system. It is fully functional, and the measured threshold dispersion and noise agree with the expectation from front-end simulations. However, a non-uniform in-pixel response related to the size and location of the n-wells in the analog circuitry has been observed in test beam measurements and will be discussed in this contribution. This asymmetry in the pixel response, enhanced by the 35 um pixel pitch - larger than in other prototypes - and certain features of the readout circuit, has not been observed in prototypes with smaller pixel pitches in this technology.
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id arxiv_https___arxiv_org_abs_2502_06573
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology
Daza, Sara Ruiz
Ballabriga, Rafael
Buschmann, Eric
Campbell, Michael
Mohr, Raimon Casanova
Dannheim, Dominik
Dilg, Jona
Dorda, Ana
King, Finn
Feyens, Ono
Gadow, Philipp
Gregor, Ingrid-Maria
Hansen, Karsten
He, Yajun
Huth, Lennart
Kremastiotis, Iraklis
Lemoine, Corentin
Maffessanti, Stefano
Mendes, Larissa
Otarid, Younes
Reckleben, Christian
Rettie, Sébastien
Viera, Manuel Alejandro del Rio
Schlaadt, Judith
Simancas, Adriana
Snoeys, Walter
Spannagel, Simon
Vanat, Tomas
Velyka, Anastasiia
Vignola, Gianpiero
Wennlöf, Håkan
Instrumentation and Detectors
The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflow and ports a hybrid pixel-detector architecture, with digital pulse processing in each pixel, into a monolithic chip. The chip matrix consists of 64$\times$16 square pixels with a size of 35$\times$35 um2, and a total active area of approximately 1.25 um2. The chip has been successfully integrated into the Caribou DAQ system. It is fully functional, and the measured threshold dispersion and noise agree with the expectation from front-end simulations. However, a non-uniform in-pixel response related to the size and location of the n-wells in the analog circuitry has been observed in test beam measurements and will be discussed in this contribution. This asymmetry in the pixel response, enhanced by the 35 um pixel pitch - larger than in other prototypes - and certain features of the readout circuit, has not been observed in prototypes with smaller pixel pitches in this technology.
title The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology
topic Instrumentation and Detectors
url https://arxiv.org/abs/2502.06573