Effect of disorder and strain on the operation of planar Ge hole spin qubits

Documents similaires

• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
  par: Wang, Zhanning, et autres
  Publié: (2023)
• Dephasing of planar Ge hole spin qubits due to 1/$\textit{f}$ charge noise
  par: Wang, Zhanning, et autres
  Publié: (2024)
• Micromagnet-free operation of electron spin qubits in Si/Si$_{1-x}$Ge$_x$ vertical double quantum dots
  par: Sarkar, Abhikbrata, et autres
  Publié: (2025)
• Anisotropic spin-blockade leakage current in a Ge hole double quantum dot
  par: Wang, Zhanning, et autres
  Publié: (2025)
• Ge as an orbitronic platform: giant in-plane orbital magneto-electric effect in a 2-dimensional hole gas
  par: Cullen, James H., et autres
  Publié: (2026)