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Main Authors: Wen, Shuyu, Pieplow, Gregor, Yang, Junchun, Jamshidi, Kambiz, Helm, Manfred, Luo, Jun-Wei, Schröder, Tim, Zhou, Shengqiang, Berencén, Yonder
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2502.07632
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author Wen, Shuyu
Pieplow, Gregor
Yang, Junchun
Jamshidi, Kambiz
Helm, Manfred
Luo, Jun-Wei
Schröder, Tim
Zhou, Shengqiang
Berencén, Yonder
author_facet Wen, Shuyu
Pieplow, Gregor
Yang, Junchun
Jamshidi, Kambiz
Helm, Manfred
Luo, Jun-Wei
Schröder, Tim
Zhou, Shengqiang
Berencén, Yonder
contents Silicon-based quantum technologies have gained increasing attention due to their potential for large-scale photonic integration, long spin coherence times, and compatibility with CMOS fabrication. Efficient spin-photon interfaces are crucial for quantum networks, enabling entanglement distribution and information transfer over long distances. While several optically active quantum emitters in silicon have been investigated, no spin-active defect with optical transitions in the telecom L-band-a key wavelength range for low-loss fiber-based communication-has been experimentally demonstrated. Here, we demonstrate the optical detection of spin states in the C center, a carbon-oxygen defect in silicon that exhibits a zero-phonon line at 1571 nm. By combining optical excitation with microwave driving, we achieve optically detected magnetic resonance, enabling spin-state readout via telecom-band optical transitions. These findings provide experimental validation of recent theoretical predictions and mark a significant step toward integrating spin-based quantum functionalities into silicon photonic platforms, paving the way for scalable quantum communication and memory applications in the telecom L-band.
format Preprint
id arxiv_https___arxiv_org_abs_2502_07632
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Optical spin readout of a silicon color center in the telecom L-band
Wen, Shuyu
Pieplow, Gregor
Yang, Junchun
Jamshidi, Kambiz
Helm, Manfred
Luo, Jun-Wei
Schröder, Tim
Zhou, Shengqiang
Berencén, Yonder
Quantum Physics
Silicon-based quantum technologies have gained increasing attention due to their potential for large-scale photonic integration, long spin coherence times, and compatibility with CMOS fabrication. Efficient spin-photon interfaces are crucial for quantum networks, enabling entanglement distribution and information transfer over long distances. While several optically active quantum emitters in silicon have been investigated, no spin-active defect with optical transitions in the telecom L-band-a key wavelength range for low-loss fiber-based communication-has been experimentally demonstrated. Here, we demonstrate the optical detection of spin states in the C center, a carbon-oxygen defect in silicon that exhibits a zero-phonon line at 1571 nm. By combining optical excitation with microwave driving, we achieve optically detected magnetic resonance, enabling spin-state readout via telecom-band optical transitions. These findings provide experimental validation of recent theoretical predictions and mark a significant step toward integrating spin-based quantum functionalities into silicon photonic platforms, paving the way for scalable quantum communication and memory applications in the telecom L-band.
title Optical spin readout of a silicon color center in the telecom L-band
topic Quantum Physics
url https://arxiv.org/abs/2502.07632