Imaging van Hove Singularity Heterogeneity in Overdoped Graphene

Fuente: arXiv
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Auteurs principaux: Blackwell, Raymond, Du, Zengyi, Okugawa, Takuya, Kundu, Asish, Wu, Zebin, Drozdov, Ilya, Rubio, Angel, Kennes, Dante, Fujita, Kazuhiro, Pasupathy, Abhay
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Publié: 2025
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author Blackwell, Raymond
Du, Zengyi
Okugawa, Takuya
Kundu, Asish
Wu, Zebin
Drozdov, Ilya
Rubio, Angel
Kennes, Dante
Fujita, Kazuhiro
Pasupathy, Abhay
author_facet Blackwell, Raymond
Du, Zengyi
Okugawa, Takuya
Kundu, Asish
Wu, Zebin
Drozdov, Ilya
Rubio, Angel
Kennes, Dante
Fujita, Kazuhiro
Pasupathy, Abhay
contents Tuning the chemical potential of a solid to the vicinity of a van Hove singularity (vHS) is a well-established route to discovering emergent quantum phases. In monolayer graphene, the use of electron-donating metal layers has recently emerged as a method to dope the chemical potential to the nearest vHS, as evidenced by Angle-Resolved Photoemission Spectroscopy (ARPES) measurements. In this work, we study the spatial uniformity of the doping from this process using spectroscopic imaging scanning tunneling microscopy (SI-STM). Using molecular beam epitaxy (MBE), we achieve electron doping of graphene on SiC using Ytterbium (Yb-Graphene). We show using in-situ ARPES that the chemical potential is shifted to within 250 meV of the vHS. Using in-situ SI-STM, we establish that there exists significant inhomogeneity in the vHS position in overdoped graphene. We find two separate reasons for this. First, the spatial inhomogeneity of the intercalated Yb leads to local variations in the doping, with a length scale of inhomogeneity set by the screening length of ~ 3 nm. Second, we observe the presence of substitutional Yb dopants in the graphene basal plane. These Yb dopants cause a strong local shift of the doping, along with a renormalization of the quasiparticle amplitude. Theoretical calculations confirm that the Yb impurities effectively change the local potential, thus energetically shifting the position of the van Hove singularity. Our results point to the importance of considering the spatial structure of doping and its inextricable link to electronic structure.
format Preprint
id arxiv_https___arxiv_org_abs_2502_07899
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Imaging van Hove Singularity Heterogeneity in Overdoped Graphene
Blackwell, Raymond
Du, Zengyi
Okugawa, Takuya
Kundu, Asish
Wu, Zebin
Drozdov, Ilya
Rubio, Angel
Kennes, Dante
Fujita, Kazuhiro
Pasupathy, Abhay
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
Tuning the chemical potential of a solid to the vicinity of a van Hove singularity (vHS) is a well-established route to discovering emergent quantum phases. In monolayer graphene, the use of electron-donating metal layers has recently emerged as a method to dope the chemical potential to the nearest vHS, as evidenced by Angle-Resolved Photoemission Spectroscopy (ARPES) measurements. In this work, we study the spatial uniformity of the doping from this process using spectroscopic imaging scanning tunneling microscopy (SI-STM). Using molecular beam epitaxy (MBE), we achieve electron doping of graphene on SiC using Ytterbium (Yb-Graphene). We show using in-situ ARPES that the chemical potential is shifted to within 250 meV of the vHS. Using in-situ SI-STM, we establish that there exists significant inhomogeneity in the vHS position in overdoped graphene. We find two separate reasons for this. First, the spatial inhomogeneity of the intercalated Yb leads to local variations in the doping, with a length scale of inhomogeneity set by the screening length of ~ 3 nm. Second, we observe the presence of substitutional Yb dopants in the graphene basal plane. These Yb dopants cause a strong local shift of the doping, along with a renormalization of the quasiparticle amplitude. Theoretical calculations confirm that the Yb impurities effectively change the local potential, thus energetically shifting the position of the van Hove singularity. Our results point to the importance of considering the spatial structure of doping and its inextricable link to electronic structure.
title Imaging van Hove Singularity Heterogeneity in Overdoped Graphene
topic Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
url https://arxiv.org/abs/2502.07899