Full-cycle device-scale simulations of memory materials with a tailored atomic-cluster-expansion potential

Fuente: arXiv

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Bibliographic Details
Main Authors:	Zhou, Yuxing, Toit, Daniel F. Thomas du, Elliott, Stephen R., Zhang, Wei, Deringer, Volker L.
Format:	Preprint
Published:	2025
Subjects:	Materials Science Computational Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2502.08393