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Full-cycle device-scale simulations of memory materials with a tailored atomic-cluster-expansion potential

Fuente: arXiv

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Dettagli Bibliografici
Autori principali:	Zhou, Yuxing, Toit, Daniel F. Thomas du, Elliott, Stephen R., Zhang, Wei, Deringer, Volker L.
Natura:	Preprint
Pubblicazione:	2025
Soggetti:	Materials Science Computational Physics
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

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