Multifunctional Altermagnet with Large Out-of-Plane Piezoelectric Response in Janus V$_{2}$AsBrO Monolayer
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arXiv
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| Hauptverfasser: | , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866913698016133120 |
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| author | Ma, Qiuyue Wang, Busheng Yang, Guochun Liu, Yong |
| author_facet | Ma, Qiuyue Wang, Busheng Yang, Guochun Liu, Yong |
| contents | Altermagnetism has emerged as a third fundamental category of collinear magnetism, characterized by spin-splitting in symmetry-compensated collinear antiferromagnets, opening new frontiers in spintronics and condensed matter physics. Here, based on first-principles calculations, we propose a novel altermagnetic semiconductor, the asymmetric Janus V$_2$AsBrO monolayer, which exhibits a magnetic easy axis favoring the out-of-plane direction and a Néel temperature ($T_N$) exceeding room temperature. The system exhibits a strain-tunable piezovalley effect, generating valley polarization under uniaxial strain. Notably, hole doping under uniaxial strain generates a net magnetization ($M$) through a piezomagnetic mechanism. Additionally, the broken inversion symmetry endows the monolayer with a substantial out-of-plane piezoelectric coefficient $d_{31}$ (2.19 pm/V), presenting broad prospects for the development and design of novel piezoelectric devices. Our findings provide a promising candidate material for the advancement of 2D multifunctional devices in nanoelectronics, spintronics, valleytronics, and piezoelectrics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_10055 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Multifunctional Altermagnet with Large Out-of-Plane Piezoelectric Response in Janus V$_{2}$AsBrO Monolayer Ma, Qiuyue Wang, Busheng Yang, Guochun Liu, Yong Materials Science Altermagnetism has emerged as a third fundamental category of collinear magnetism, characterized by spin-splitting in symmetry-compensated collinear antiferromagnets, opening new frontiers in spintronics and condensed matter physics. Here, based on first-principles calculations, we propose a novel altermagnetic semiconductor, the asymmetric Janus V$_2$AsBrO monolayer, which exhibits a magnetic easy axis favoring the out-of-plane direction and a Néel temperature ($T_N$) exceeding room temperature. The system exhibits a strain-tunable piezovalley effect, generating valley polarization under uniaxial strain. Notably, hole doping under uniaxial strain generates a net magnetization ($M$) through a piezomagnetic mechanism. Additionally, the broken inversion symmetry endows the monolayer with a substantial out-of-plane piezoelectric coefficient $d_{31}$ (2.19 pm/V), presenting broad prospects for the development and design of novel piezoelectric devices. Our findings provide a promising candidate material for the advancement of 2D multifunctional devices in nanoelectronics, spintronics, valleytronics, and piezoelectrics. |
| title | Multifunctional Altermagnet with Large Out-of-Plane Piezoelectric Response in Janus V$_{2}$AsBrO Monolayer |
| topic | Materials Science |
| url | https://arxiv.org/abs/2502.10055 |