Semiconducting behaviors at epitaxial Ca0.5TaO3 interfaces

Fuente: arXiv
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Autores principales: Nie, Guangdong, Han, Guanghui, Huang, Shengpu, Wu, Huiyin, Wang, Deshun, Liu, Kangxi, Ding, Hao, Tang, Fangdong, Peng, Licong, Ma, Dashuai, Sun, Young, Liu, Changjiang, Hong, Deshun
Formato: Preprint
Publicado: 2025
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author Nie, Guangdong
Han, Guanghui
Huang, Shengpu
Wu, Huiyin
Wang, Deshun
Liu, Kangxi
Ding, Hao
Tang, Fangdong
Peng, Licong
Ma, Dashuai
Sun, Young
Liu, Changjiang
Hong, Deshun
author_facet Nie, Guangdong
Han, Guanghui
Huang, Shengpu
Wu, Huiyin
Wang, Deshun
Liu, Kangxi
Ding, Hao
Tang, Fangdong
Peng, Licong
Ma, Dashuai
Sun, Young
Liu, Changjiang
Hong, Deshun
contents Emergent phenomena take place in symmetry-breaking systems, notably the recently discovered two-dimensional electron gas and its tunable superconductivities near the KTaO3 interfaces. Here, we synthesized perovskite Ca0.5TaO3 films along both [001] and [111] orientations. Different from the KTaO3 system, Ca0.5TaO3 films show semiconducting behaviors when capped with LaAlO3 films in both [001] and [111] orientations. By growing films at higher temperatures, more oxygen vacancies can be introduced, and the carrier density can be tuned from ~ 1014 cm-2 to ~ 1016 cm-2. Another difference is that the superconducting transition temperature Tc in KTaO3 (111) increases linearly along with its carrier density, while the Ca0.5TaO3 (111) remains semiconducting when carrier density ranges from ~ 1014 cm-2 to ~ 1016 cm-2. Based on the density function theory calculation, Ca0.5TaO3 and KTaO3 show similar electronic band structures. According to the energy-dispersive X-ray spectroscopy, we found heavy Sr diffusion from the substrate to the Ca0.5TaO3 layer, which may destroy the interfacial conductivity. Our work demonstrates that besides the oxygen vacancies, electronic transport is sensitive to the atomic intermixing near the interface in tantulates.
format Preprint
id arxiv_https___arxiv_org_abs_2502_10730
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Semiconducting behaviors at epitaxial Ca0.5TaO3 interfaces
Nie, Guangdong
Han, Guanghui
Huang, Shengpu
Wu, Huiyin
Wang, Deshun
Liu, Kangxi
Ding, Hao
Tang, Fangdong
Peng, Licong
Ma, Dashuai
Sun, Young
Liu, Changjiang
Hong, Deshun
Materials Science
Emergent phenomena take place in symmetry-breaking systems, notably the recently discovered two-dimensional electron gas and its tunable superconductivities near the KTaO3 interfaces. Here, we synthesized perovskite Ca0.5TaO3 films along both [001] and [111] orientations. Different from the KTaO3 system, Ca0.5TaO3 films show semiconducting behaviors when capped with LaAlO3 films in both [001] and [111] orientations. By growing films at higher temperatures, more oxygen vacancies can be introduced, and the carrier density can be tuned from ~ 1014 cm-2 to ~ 1016 cm-2. Another difference is that the superconducting transition temperature Tc in KTaO3 (111) increases linearly along with its carrier density, while the Ca0.5TaO3 (111) remains semiconducting when carrier density ranges from ~ 1014 cm-2 to ~ 1016 cm-2. Based on the density function theory calculation, Ca0.5TaO3 and KTaO3 show similar electronic band structures. According to the energy-dispersive X-ray spectroscopy, we found heavy Sr diffusion from the substrate to the Ca0.5TaO3 layer, which may destroy the interfacial conductivity. Our work demonstrates that besides the oxygen vacancies, electronic transport is sensitive to the atomic intermixing near the interface in tantulates.
title Semiconducting behaviors at epitaxial Ca0.5TaO3 interfaces
topic Materials Science
url https://arxiv.org/abs/2502.10730