Density-dependent spin susceptibility and effective mass in monolayer MoSe2

Fuente: arXiv
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Autores principales: Liu, Chang, Jia, Tongtong, Sun, Zheng, Gu, Yu, Xu, Fan, Watanabe, Kenji, Taniguchi, Takashi, Jia, Jinfeng, Wang, Shiyong, Liu, Xiaoxue, Li, Tingxin
Formato: Preprint
Publicado: 2025
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author Liu, Chang
Jia, Tongtong
Sun, Zheng
Gu, Yu
Xu, Fan
Watanabe, Kenji
Taniguchi, Takashi
Jia, Jinfeng
Wang, Shiyong
Liu, Xiaoxue
Li, Tingxin
author_facet Liu, Chang
Jia, Tongtong
Sun, Zheng
Gu, Yu
Xu, Fan
Watanabe, Kenji
Taniguchi, Takashi
Jia, Jinfeng
Wang, Shiyong
Liu, Xiaoxue
Li, Tingxin
contents Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth contacts, enabling reliable ohmic contact down to low electron densities, with a maximum Hall mobility of approximately 22,000 cm2/Vs. Low-temperature transport measurements illustrate metal-insulator transitions, and density-dependent quantum oscillation sequences. Enhanced spin susceptibility and density-dependent effective mass are observed, attributed to interaction effects and valley polarization. These findings establish monolayer MoSe2 as a versatile platform for further exploring interaction-driven quantum states.
format Preprint
id arxiv_https___arxiv_org_abs_2502_10972
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Density-dependent spin susceptibility and effective mass in monolayer MoSe2
Liu, Chang
Jia, Tongtong
Sun, Zheng
Gu, Yu
Xu, Fan
Watanabe, Kenji
Taniguchi, Takashi
Jia, Jinfeng
Wang, Shiyong
Liu, Xiaoxue
Li, Tingxin
Mesoscale and Nanoscale Physics
Materials Science
Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth contacts, enabling reliable ohmic contact down to low electron densities, with a maximum Hall mobility of approximately 22,000 cm2/Vs. Low-temperature transport measurements illustrate metal-insulator transitions, and density-dependent quantum oscillation sequences. Enhanced spin susceptibility and density-dependent effective mass are observed, attributed to interaction effects and valley polarization. These findings establish monolayer MoSe2 as a versatile platform for further exploring interaction-driven quantum states.
title Density-dependent spin susceptibility and effective mass in monolayer MoSe2
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2502.10972