Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2502.11628 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866915154463031296 |
|---|---|
| author | Winkelmann, Aimo Cios, Grzegorz Perzyński, Konrad Tokarski, Tomasz Mehnert, Klaus Madej, Łukasz Bała, Piotr |
| author_facet | Winkelmann, Aimo Cios, Grzegorz Perzyński, Konrad Tokarski, Tomasz Mehnert, Klaus Madej, Łukasz Bała, Piotr |
| contents | We summarize a data analysis approach for electron backscatter diffraction (EBSD) which uses high-resolution Kikuchi pattern simulations to measure isochoric relative deformation gradient tensors from experimentally measured Kikuchi patterns of relatively low resolution. Simulation-based supersampling of the theoretical test diffraction patterns enables a significant precision improvement of tensor parameters obtained in best-fit determinations of strains and orientations from low-resolution experimental patterns. As an application, we demonstrate high-resolution orientation and strain analysis for the model case of hardness test indents on a Si(100) wafer, using Kikuchi patterns of variable resolution. The approach shows noise levels near $1 \times 10^{-4}$ in the relative deviatoric strain norm and in the relative rotation angles on nominally strain-free regions of the silicon wafer. The strain and rotation measurements are interpreted by finite element simulations. While confirming the basic findings of previously published studies, the present approach enables a potential reduction in the necessary pattern data size by about two orders of magnitude. We estimate that pattern resolutions in the order of $256\times256$ pixels should be enough to solve a majority of EBSD analysis tasks using pattern matching techniques. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_11628 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Simulation-based Super-Resolution EBSD for Measurements of Relative Deformation Gradient Tensors Winkelmann, Aimo Cios, Grzegorz Perzyński, Konrad Tokarski, Tomasz Mehnert, Klaus Madej, Łukasz Bała, Piotr Materials Science We summarize a data analysis approach for electron backscatter diffraction (EBSD) which uses high-resolution Kikuchi pattern simulations to measure isochoric relative deformation gradient tensors from experimentally measured Kikuchi patterns of relatively low resolution. Simulation-based supersampling of the theoretical test diffraction patterns enables a significant precision improvement of tensor parameters obtained in best-fit determinations of strains and orientations from low-resolution experimental patterns. As an application, we demonstrate high-resolution orientation and strain analysis for the model case of hardness test indents on a Si(100) wafer, using Kikuchi patterns of variable resolution. The approach shows noise levels near $1 \times 10^{-4}$ in the relative deviatoric strain norm and in the relative rotation angles on nominally strain-free regions of the silicon wafer. The strain and rotation measurements are interpreted by finite element simulations. While confirming the basic findings of previously published studies, the present approach enables a potential reduction in the necessary pattern data size by about two orders of magnitude. We estimate that pattern resolutions in the order of $256\times256$ pixels should be enough to solve a majority of EBSD analysis tasks using pattern matching techniques. |
| title | Simulation-based Super-Resolution EBSD for Measurements of Relative Deformation Gradient Tensors |
| topic | Materials Science |
| url | https://arxiv.org/abs/2502.11628 |