Improving electron tomography of mesoporous silica by Ga intrusion

Fuente: arXiv
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Hauptverfasser: Kichigin, Alexander, Böhmer, Johannes, Buwen, Moritz, Zubiri, Benjamin Apeleo, Wu, Mingjian, Will, Johannes, Drobek, Dominik, Götz, Alexander, Vorlaufer, Nora, Söllner, Jakob, Thommes, Matthias, Felfer, Peter, Przybilla, Thomas, Spiecker, Erdmann
Format: Preprint
Veröffentlicht: 2025
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author Kichigin, Alexander
Böhmer, Johannes
Buwen, Moritz
Zubiri, Benjamin Apeleo
Wu, Mingjian
Will, Johannes
Drobek, Dominik
Götz, Alexander
Vorlaufer, Nora
Söllner, Jakob
Thommes, Matthias
Felfer, Peter
Przybilla, Thomas
Spiecker, Erdmann
author_facet Kichigin, Alexander
Böhmer, Johannes
Buwen, Moritz
Zubiri, Benjamin Apeleo
Wu, Mingjian
Will, Johannes
Drobek, Dominik
Götz, Alexander
Vorlaufer, Nora
Söllner, Jakob
Thommes, Matthias
Felfer, Peter
Przybilla, Thomas
Spiecker, Erdmann
contents Electron tomography (ET) offers nanoscale 3D characterization of mesoporous materials but is often limited by their low scattering contrast. Here, we introduce a gallium (Ga) intrusion strategy for mesoporous silica that dramatically improves imaging contrast - a key benefit that enables more accurate 3D reconstructions. By infiltrating Ga through a modified mercury intrusion porosimetry process, the high-angle annular dark-field (HAADF) STEM signal is enhanced by 5 times, resulting in a 34% improvement in reconstruction resolution and a 49% enhancement in interface sharpness. In addition, the increased sample conductivity facilitates focused ion beam (FIB) milling by minimizing charging effects and reducing drift. This approach enables precise segmentation and quantitative analysis of pore connectivity and size distribution, thereby extending the applicability of ET to light-element non-conductive materials and advancing structure-property characterization of complex porous systems.
format Preprint
id arxiv_https___arxiv_org_abs_2502_11794
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Improving electron tomography of mesoporous silica by Ga intrusion
Kichigin, Alexander
Böhmer, Johannes
Buwen, Moritz
Zubiri, Benjamin Apeleo
Wu, Mingjian
Will, Johannes
Drobek, Dominik
Götz, Alexander
Vorlaufer, Nora
Söllner, Jakob
Thommes, Matthias
Felfer, Peter
Przybilla, Thomas
Spiecker, Erdmann
Optics
Electron tomography (ET) offers nanoscale 3D characterization of mesoporous materials but is often limited by their low scattering contrast. Here, we introduce a gallium (Ga) intrusion strategy for mesoporous silica that dramatically improves imaging contrast - a key benefit that enables more accurate 3D reconstructions. By infiltrating Ga through a modified mercury intrusion porosimetry process, the high-angle annular dark-field (HAADF) STEM signal is enhanced by 5 times, resulting in a 34% improvement in reconstruction resolution and a 49% enhancement in interface sharpness. In addition, the increased sample conductivity facilitates focused ion beam (FIB) milling by minimizing charging effects and reducing drift. This approach enables precise segmentation and quantitative analysis of pore connectivity and size distribution, thereby extending the applicability of ET to light-element non-conductive materials and advancing structure-property characterization of complex porous systems.
title Improving electron tomography of mesoporous silica by Ga intrusion
topic Optics
url https://arxiv.org/abs/2502.11794