UV photodetectors and field-effect transistors based on $β$-Ga$_2$O$_3$ nanomembranes produced by ion-beam-assisted exfoliation
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866929719108173824 |
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| author | Pedro, Miguel Cardoso Esteves, Duarte Magalhães Pereira, Daniela Rodrigues Alves, Luís Cerqueira Bouhafs, Chamseddine Lorenz, Katharina Peres, Marco |
| author_facet | Pedro, Miguel Cardoso Esteves, Duarte Magalhães Pereira, Daniela Rodrigues Alves, Luís Cerqueira Bouhafs, Chamseddine Lorenz, Katharina Peres, Marco |
| contents | $β$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET). Ti/Au contacts to the membrane are found to be rectifying. However, through thermal treatment in a nitrogen atmosphere for one minute at 500 °C, it is possible to modify this junction to have an ohmic behavior. An MSM PD is studied, reaching a high responsivity of 2.6$\times$10$^{4}$ A/W and a detectivity of 2.4$\times$10$^{14}$ Jones, under 245 nm wavelength illumination, and an applied voltage of 40 V. In order to better understand the behavior of the two junctions, in particular the iono/photocurrent mechanisms, an ion microprobe system is used to assess the response of these PD when excitation is localized in the different regions of the device. Finally, a depletion-mode FET is obtained, with an on/off current ratio of 7.7$\times$10$^{7}$ in the linear regime, at a drain-to-source voltage of 5 V, and with a threshold voltage around $-$3 V. The success in obtaining FET, and most notably, MSM photodetectors, while using a simple device structure, indicates a great potential of the nanomembranes produced by ion-beam-assisted exfoliation for the development of high-performance devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_13058 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | UV photodetectors and field-effect transistors based on $β$-Ga$_2$O$_3$ nanomembranes produced by ion-beam-assisted exfoliation Pedro, Miguel Cardoso Esteves, Duarte Magalhães Pereira, Daniela Rodrigues Alves, Luís Cerqueira Bouhafs, Chamseddine Lorenz, Katharina Peres, Marco Materials Science $β$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET). Ti/Au contacts to the membrane are found to be rectifying. However, through thermal treatment in a nitrogen atmosphere for one minute at 500 °C, it is possible to modify this junction to have an ohmic behavior. An MSM PD is studied, reaching a high responsivity of 2.6$\times$10$^{4}$ A/W and a detectivity of 2.4$\times$10$^{14}$ Jones, under 245 nm wavelength illumination, and an applied voltage of 40 V. In order to better understand the behavior of the two junctions, in particular the iono/photocurrent mechanisms, an ion microprobe system is used to assess the response of these PD when excitation is localized in the different regions of the device. Finally, a depletion-mode FET is obtained, with an on/off current ratio of 7.7$\times$10$^{7}$ in the linear regime, at a drain-to-source voltage of 5 V, and with a threshold voltage around $-$3 V. The success in obtaining FET, and most notably, MSM photodetectors, while using a simple device structure, indicates a great potential of the nanomembranes produced by ion-beam-assisted exfoliation for the development of high-performance devices. |
| title | UV photodetectors and field-effect transistors based on $β$-Ga$_2$O$_3$ nanomembranes produced by ion-beam-assisted exfoliation |
| topic | Materials Science |
| url | https://arxiv.org/abs/2502.13058 |