Engineering 2D Van der Waals Electrode via MBE Grown Weyl Semimetal 1T-WTe2 for Enhanced Photodetection in InSe
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2025
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866909769689726976 |
|---|---|
| author | Khan, Biswajit Kandar, Santanu Khan, Taslim Bhattacharya, Kritika Chowdahury, Nahid Ghosh, Suprovat Kumar, Pawan Singh, Rajendra Das, Samaresh |
| author_facet | Khan, Biswajit Kandar, Santanu Khan, Taslim Bhattacharya, Kritika Chowdahury, Nahid Ghosh, Suprovat Kumar, Pawan Singh, Rajendra Das, Samaresh |
| contents | Achieving low contact resistance in advanced quantum electronic devices remains a critical challenge. With the growing demand for faster and energy-efficient devices, 2D contact engineering offers a promising solution. Beyond graphene, 1T-WTe2 has attracted attention for its excellent electrical transport, quantum phenomena, and Weyl semimetallic properties. Here, we demonstrate the direct wafer-scale growth of 1T-WTe2 via molecular beam epitaxy (MBE) and its use as a 2D contact for layered materials such as InSe. The 1T WTe2/InSe interface exhibits a barrier height nearly half that of conventional metal contacts, and its contact resistance is reduced by a factor of 21, effectively suppressing Fermi level pinning and enabling efficient electron injection. InSe/1T WTe2 photodetectors show broad photoresponsivity (0.14 to 217.58 A/W) under NIR to DUV illumination with fast rise/fall times of 42/126 ms, compared to lower responsivity (0.000865 A/W to 3.64 A/W) and slower response (150/144 ms) for InSe/Ti Au devices. The 1T WTe2/InSe devices thus exhibit approximately 60 times higher responsivity and 4 times faster response than conventional metal contacts. These results establish MBE-grown 1T-WTe2 as an effective 2D electrode, enhancing photodetection performance while simplifying device architecture, making it a strong candidate for next generation nanoelectronic and optoelectronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_13261 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Engineering 2D Van der Waals Electrode via MBE Grown Weyl Semimetal 1T-WTe2 for Enhanced Photodetection in InSe Khan, Biswajit Kandar, Santanu Khan, Taslim Bhattacharya, Kritika Chowdahury, Nahid Ghosh, Suprovat Kumar, Pawan Singh, Rajendra Das, Samaresh Optics Achieving low contact resistance in advanced quantum electronic devices remains a critical challenge. With the growing demand for faster and energy-efficient devices, 2D contact engineering offers a promising solution. Beyond graphene, 1T-WTe2 has attracted attention for its excellent electrical transport, quantum phenomena, and Weyl semimetallic properties. Here, we demonstrate the direct wafer-scale growth of 1T-WTe2 via molecular beam epitaxy (MBE) and its use as a 2D contact for layered materials such as InSe. The 1T WTe2/InSe interface exhibits a barrier height nearly half that of conventional metal contacts, and its contact resistance is reduced by a factor of 21, effectively suppressing Fermi level pinning and enabling efficient electron injection. InSe/1T WTe2 photodetectors show broad photoresponsivity (0.14 to 217.58 A/W) under NIR to DUV illumination with fast rise/fall times of 42/126 ms, compared to lower responsivity (0.000865 A/W to 3.64 A/W) and slower response (150/144 ms) for InSe/Ti Au devices. The 1T WTe2/InSe devices thus exhibit approximately 60 times higher responsivity and 4 times faster response than conventional metal contacts. These results establish MBE-grown 1T-WTe2 as an effective 2D electrode, enhancing photodetection performance while simplifying device architecture, making it a strong candidate for next generation nanoelectronic and optoelectronic devices. |
| title | Engineering 2D Van der Waals Electrode via MBE Grown Weyl Semimetal 1T-WTe2 for Enhanced Photodetection in InSe |
| topic | Optics |
| url | https://arxiv.org/abs/2502.13261 |