Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Fuente: arXiv

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Bibliographic Details
Main Authors:	Mondal, Badal, Pampili, Pietro, Mukherjee, Jayjit, Moran, David, Parbrook, Peter James, Schulz, Stefan
Format:	Preprint
Published:	2025
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2502.13809