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Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Mondal, Badal, Pampili, Pietro, Mukherjee, Jayjit, Moran, David, Parbrook, Peter James, Schulz, Stefan
Formato:	Preprint
Publicado:	2025
Materias:	Materials Science Applied Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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