Fast spin precession and strong perpendicular magnetic anisotropy in ferrimagnetic Mn4N thin films improved by Pd buffer layer

Fuente: arXiv
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Autores principales: Zhang, Yao, Kim, Yun, Murmu, Peter P., Huang, Dingbin, Lyu, Deyuan, Wang, Jian-Ping, Wang, Xiaojia, Granville, Simon
Formato: Preprint
Publicado: 2025
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author Zhang, Yao
Kim, Yun
Murmu, Peter P.
Huang, Dingbin
Lyu, Deyuan
Wang, Jian-Ping
Wang, Xiaojia
Granville, Simon
author_facet Zhang, Yao
Kim, Yun
Murmu, Peter P.
Huang, Dingbin
Lyu, Deyuan
Wang, Jian-Ping
Wang, Xiaojia
Granville, Simon
contents Ferrimagnets take the advantages of both ferromagnets and antiferromagnets making them promise for spintronic applications. Here we prepared ferrimagnetic Mn4N thin films with high Curie temperature and investigated the crystalline structure and magnetic properties affected by the Pd buffer layer. We demonstrated that both crystalline quality and perpendicular magnetic anisotropy (PMA) of Mn4N thin films are enhanced significantly due to the relaxation of tensile stress induced by the Pd buffer layer. We also demonstrated a fast spin precession at room temperature, almost 100 GHz, in Mn4N thin films. With the characteristics of high thermal stability, enhanced PMA by buffer layer and fast spin precession, Mn4N thin film is a promising material for spintronic applications.
format Preprint
id arxiv_https___arxiv_org_abs_2502_14151
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Fast spin precession and strong perpendicular magnetic anisotropy in ferrimagnetic Mn4N thin films improved by Pd buffer layer
Zhang, Yao
Kim, Yun
Murmu, Peter P.
Huang, Dingbin
Lyu, Deyuan
Wang, Jian-Ping
Wang, Xiaojia
Granville, Simon
Materials Science
Mesoscale and Nanoscale Physics
Ferrimagnets take the advantages of both ferromagnets and antiferromagnets making them promise for spintronic applications. Here we prepared ferrimagnetic Mn4N thin films with high Curie temperature and investigated the crystalline structure and magnetic properties affected by the Pd buffer layer. We demonstrated that both crystalline quality and perpendicular magnetic anisotropy (PMA) of Mn4N thin films are enhanced significantly due to the relaxation of tensile stress induced by the Pd buffer layer. We also demonstrated a fast spin precession at room temperature, almost 100 GHz, in Mn4N thin films. With the characteristics of high thermal stability, enhanced PMA by buffer layer and fast spin precession, Mn4N thin film is a promising material for spintronic applications.
title Fast spin precession and strong perpendicular magnetic anisotropy in ferrimagnetic Mn4N thin films improved by Pd buffer layer
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2502.14151