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| Autori principali: | , , , , , , , |
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| Natura: | Preprint |
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2025
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| Accesso online: | https://arxiv.org/abs/2502.14181 |
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| _version_ | 1866915161748537344 |
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| author | Li, Yun Yun, Tinghe Wei, Bohan Mu, Haoran Du, Luojun Cui, Nan Zhang, Guangyu Lin, Shenghuang |
| author_facet | Li, Yun Yun, Tinghe Wei, Bohan Mu, Haoran Du, Luojun Cui, Nan Zhang, Guangyu Lin, Shenghuang |
| contents | The development of two-dimensional (2D) transition metal dichalcogenides (TMDs) based transistors has been constrained by high contact resistance and inadequate current delivery, primarily stemming from metal-induced gap states and Fermi level pinning. Research into addressing these challenges is essential for the advancing 2D transistors from laboratory experiments to industrial-grade production. In this work, we present amorphous Ga$_2$O$_3$ as a novel tunneling contact layer for multilayer WS2-based field-effect transistors (FETs) to enhance electrical performance. The addition of this innovative tunneling layer avoid Schottky barrier forming while finally change into a tunneling barrier with the barrier height to just 3.7 meV, near-ideal ohmic contacts. This approach effectively reduces contact resistance to only 2.38 k$Ω\,μ$m and specific contact resistivity as low as $3 \times 10^{-5}$ $Ω$cm$^2$. A record-high electron mobility of 296 cm$^2$ V$^{-1}$ s$^{-1}$ and ON-OFF ratio over 106 are realized for WS$_2$ transistor at room temperature. Compared to other tunneling materials, ultrathin Ga$_2$O$_3$ layer offers scalability, cost-efficient production and broad substrate compatibility, making it well-suited for seamless integration with industrial wafer-scale electronics. A robust device performance remains highly consistent in a large-scale transistor array fabricated on $1.5\times 1.5$ cm$^2$ chips, with the average mobility closing to 200 cm$^2$ V$^{-1}$ s$^{-1}$. These findings establish a new benchmark for contact performance in 2D transistors and prove the potential of tunneling contact engineering in advancing high-performance, scalable 29 pelectronics with promising applications in quantum computing and communication. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_14181 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ultrathin Ga$_2$O$_3$ Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor Li, Yun Yun, Tinghe Wei, Bohan Mu, Haoran Du, Luojun Cui, Nan Zhang, Guangyu Lin, Shenghuang Mesoscale and Nanoscale Physics Materials Science Applied Physics The development of two-dimensional (2D) transition metal dichalcogenides (TMDs) based transistors has been constrained by high contact resistance and inadequate current delivery, primarily stemming from metal-induced gap states and Fermi level pinning. Research into addressing these challenges is essential for the advancing 2D transistors from laboratory experiments to industrial-grade production. In this work, we present amorphous Ga$_2$O$_3$ as a novel tunneling contact layer for multilayer WS2-based field-effect transistors (FETs) to enhance electrical performance. The addition of this innovative tunneling layer avoid Schottky barrier forming while finally change into a tunneling barrier with the barrier height to just 3.7 meV, near-ideal ohmic contacts. This approach effectively reduces contact resistance to only 2.38 k$Ω\,μ$m and specific contact resistivity as low as $3 \times 10^{-5}$ $Ω$cm$^2$. A record-high electron mobility of 296 cm$^2$ V$^{-1}$ s$^{-1}$ and ON-OFF ratio over 106 are realized for WS$_2$ transistor at room temperature. Compared to other tunneling materials, ultrathin Ga$_2$O$_3$ layer offers scalability, cost-efficient production and broad substrate compatibility, making it well-suited for seamless integration with industrial wafer-scale electronics. A robust device performance remains highly consistent in a large-scale transistor array fabricated on $1.5\times 1.5$ cm$^2$ chips, with the average mobility closing to 200 cm$^2$ V$^{-1}$ s$^{-1}$. These findings establish a new benchmark for contact performance in 2D transistors and prove the potential of tunneling contact engineering in advancing high-performance, scalable 29 pelectronics with promising applications in quantum computing and communication. |
| title | Ultrathin Ga$_2$O$_3$ Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor |
| topic | Mesoscale and Nanoscale Physics Materials Science Applied Physics |
| url | https://arxiv.org/abs/2502.14181 |