Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review
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arXiv
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866912394084614144 |
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| author | Capan, Ivana |
| author_facet | Capan, Ivana |
| contents | This paper aims to critically review electrically active defects studied by junction spectroscopy techniques (deep-level transient spectroscopy and minority carrier transient spectroscopy) in the three most commonly used silicon carbide (SiC) polytypes: 3C-SiC, 4H-SiC, and 6H-SiC. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_14426 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review Capan, Ivana Materials Science This paper aims to critically review electrically active defects studied by junction spectroscopy techniques (deep-level transient spectroscopy and minority carrier transient spectroscopy) in the three most commonly used silicon carbide (SiC) polytypes: 3C-SiC, 4H-SiC, and 6H-SiC. |
| title | Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review |
| topic | Materials Science |
| url | https://arxiv.org/abs/2502.14426 |