Strong-coupling high-$T_{\rm c}$ superconductivity in doped correlated band insulators

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Hauptverfasser: Nomura, Yusuke, Kitatani, Motoharu, Sakai, Shiro, Arita, Ryotaro
Format: Preprint
Veröffentlicht: 2025
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author Nomura, Yusuke
Kitatani, Motoharu
Sakai, Shiro
Arita, Ryotaro
author_facet Nomura, Yusuke
Kitatani, Motoharu
Sakai, Shiro
Arita, Ryotaro
contents We explore the superconducting properties of the bilayer Hubbard model, which exhibits a high transition temperature ($T_{\rm c}$) for an $s_{\pm}$ pairing, using a cluster extension of the dynamical mean-field theory. Unlike the single-layer Hubbard model, where the $d$-wave superconductivity emerges by doping the Mott insulator, the parent state of the bilayer system is a correlated band insulator. Above $T_{\rm c}$, slight hole (electron) doping introduces a striking dichotomy between electron and hole pockets: the electron (hole) pocket develops a pseudogap while the other becomes a nearly incipient band. We reveal that the superconductivity is driven by kinetic (potential) energy gain in the underdoped (overdoped) region. We also find a very short coherence length, for which we argue the relevance to multi-orbital physics. Our study offers crucial insights into the superconductivity in the bilayer Hubbard model potentially relevant to La$_3$Ni$_2$O$_7$.
format Preprint
id arxiv_https___arxiv_org_abs_2502_14601
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Strong-coupling high-$T_{\rm c}$ superconductivity in doped correlated band insulators
Nomura, Yusuke
Kitatani, Motoharu
Sakai, Shiro
Arita, Ryotaro
Superconductivity
Strongly Correlated Electrons
We explore the superconducting properties of the bilayer Hubbard model, which exhibits a high transition temperature ($T_{\rm c}$) for an $s_{\pm}$ pairing, using a cluster extension of the dynamical mean-field theory. Unlike the single-layer Hubbard model, where the $d$-wave superconductivity emerges by doping the Mott insulator, the parent state of the bilayer system is a correlated band insulator. Above $T_{\rm c}$, slight hole (electron) doping introduces a striking dichotomy between electron and hole pockets: the electron (hole) pocket develops a pseudogap while the other becomes a nearly incipient band. We reveal that the superconductivity is driven by kinetic (potential) energy gain in the underdoped (overdoped) region. We also find a very short coherence length, for which we argue the relevance to multi-orbital physics. Our study offers crucial insights into the superconductivity in the bilayer Hubbard model potentially relevant to La$_3$Ni$_2$O$_7$.
title Strong-coupling high-$T_{\rm c}$ superconductivity in doped correlated band insulators
topic Superconductivity
Strongly Correlated Electrons
url https://arxiv.org/abs/2502.14601