Quantum Emitters in Flux Grown hBN
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2025
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866913701576048640 |
|---|---|
| author | Williams, Evan Gale, Angus Horder, Jake Scognamiglio, Dominic Toth, Milos Aharonovich, Igor |
| author_facet | Williams, Evan Gale, Angus Horder, Jake Scognamiglio, Dominic Toth, Milos Aharonovich, Igor |
| contents | Hexagonal boron nitride (hBN) is an emerging material for use in quantum technologies, hosting bright and stable single photon emitters (SPEs). The B-center is one promising SPE in hBN, due to the near-deterministic creation methods and regular emission wavelength. However, incorporation of B-centers in high-quality crystals remains challenging, typically relying on additional post-growth methods to increase creation efficiency. Here, we have demonstrated controlled carbon doping of hBN during growth, using a metal flux based method to increase the efficiency of B-center creation. Importantly, single B-centers with $g^{(2)}(0) < 0.5$ were able to be generated in the as-grown hBN when carbon additions during growth exceeded 2.5 wt.% C. Resonant excitation measurements revealed linewidths of 3.5 GHz with only moderate spectral diffusion present, demonstrating the applicability of the as-grown hBN as a host for high quality B-centers. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_15171 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Quantum Emitters in Flux Grown hBN Williams, Evan Gale, Angus Horder, Jake Scognamiglio, Dominic Toth, Milos Aharonovich, Igor Materials Science Applied Physics Optics Hexagonal boron nitride (hBN) is an emerging material for use in quantum technologies, hosting bright and stable single photon emitters (SPEs). The B-center is one promising SPE in hBN, due to the near-deterministic creation methods and regular emission wavelength. However, incorporation of B-centers in high-quality crystals remains challenging, typically relying on additional post-growth methods to increase creation efficiency. Here, we have demonstrated controlled carbon doping of hBN during growth, using a metal flux based method to increase the efficiency of B-center creation. Importantly, single B-centers with $g^{(2)}(0) < 0.5$ were able to be generated in the as-grown hBN when carbon additions during growth exceeded 2.5 wt.% C. Resonant excitation measurements revealed linewidths of 3.5 GHz with only moderate spectral diffusion present, demonstrating the applicability of the as-grown hBN as a host for high quality B-centers. |
| title | Quantum Emitters in Flux Grown hBN |
| topic | Materials Science Applied Physics Optics |
| url | https://arxiv.org/abs/2502.15171 |