Symmetry-breaking effects on spin-orbit torque switching in ferromagnetic semiconductors with perpendicular magnetic anisotropy

Fuente: arXiv
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Autori principali: Jana, Apu Kumar, Lee, Sanghoon
Natura: Preprint
Pubblicazione: 2025
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author Jana, Apu Kumar
Lee, Sanghoon
author_facet Jana, Apu Kumar
Lee, Sanghoon
contents This study explores the mechanisms of spin-orbit torque (SOT) switching in ferromagnetic semiconductors (FMS) with perpendicular magnetic anisotropy (PMA), emphasizing the impact of symmetry-breaking. Using micromagnetic simulations based on the Landau-Lifshitz-Gilbert (LLG) equation, we examine several symmetry-breaking factors, including bias field misalignment, interlayer exchange coupling, out-of-plane spin polarization, and tilted magnetic anisotropy. The results reveal that bias field misalignment relative to the film plane significantly distorts the SOT switching hysteresis. Additionally, intrinsic symmetry-breaking effects, such as internal coupling fields, out-of-plane spin polarization, and tilted anisotropy, facilitate field-free SOT (FF-SOT) switching without external bias fields. Each type of FF-SOT switching exhibits distinct characteristics, including hysteresis shifts, switching ratios, and saturated magnetization. This work emphasizes the role of symmetry-breaking in FF-SOT switching and offers fundamental information for interpreting FF-SOT switching observed from FMS films in experiments, contributing to the optimization of SOT efficiency and the advancement of spintronics technologies.
format Preprint
id arxiv_https___arxiv_org_abs_2502_16788
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Symmetry-breaking effects on spin-orbit torque switching in ferromagnetic semiconductors with perpendicular magnetic anisotropy
Jana, Apu Kumar
Lee, Sanghoon
Mesoscale and Nanoscale Physics
This study explores the mechanisms of spin-orbit torque (SOT) switching in ferromagnetic semiconductors (FMS) with perpendicular magnetic anisotropy (PMA), emphasizing the impact of symmetry-breaking. Using micromagnetic simulations based on the Landau-Lifshitz-Gilbert (LLG) equation, we examine several symmetry-breaking factors, including bias field misalignment, interlayer exchange coupling, out-of-plane spin polarization, and tilted magnetic anisotropy. The results reveal that bias field misalignment relative to the film plane significantly distorts the SOT switching hysteresis. Additionally, intrinsic symmetry-breaking effects, such as internal coupling fields, out-of-plane spin polarization, and tilted anisotropy, facilitate field-free SOT (FF-SOT) switching without external bias fields. Each type of FF-SOT switching exhibits distinct characteristics, including hysteresis shifts, switching ratios, and saturated magnetization. This work emphasizes the role of symmetry-breaking in FF-SOT switching and offers fundamental information for interpreting FF-SOT switching observed from FMS films in experiments, contributing to the optimization of SOT efficiency and the advancement of spintronics technologies.
title Symmetry-breaking effects on spin-orbit torque switching in ferromagnetic semiconductors with perpendicular magnetic anisotropy
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2502.16788