APA (7th ed.) Citation

Cuesta-Lopez, J., Ganeriwala, M. D., Marin, E. G., Toral-Lopez, A., Pasadas, F., Ruiz, F. G., & Godoy, A. (2025). Numerical study of synaptic behavior in amorphous HfO2-based ferroelectric-like FETs generated by voltage-driven ion migration.

Chicago Style (17th ed.) Citation

Cuesta-Lopez, Juan, Mohit D. Ganeriwala, Enrique G. Marin, Alejandro Toral-Lopez, Francisco Pasadas, Francisco G. Ruiz, and Andres Godoy. Numerical Study of Synaptic Behavior in Amorphous HfO2-based Ferroelectric-like FETs Generated by Voltage-driven Ion Migration. 2025.

MLA (9th ed.) Citation

Cuesta-Lopez, Juan, et al. Numerical Study of Synaptic Behavior in Amorphous HfO2-based Ferroelectric-like FETs Generated by Voltage-driven Ion Migration. 2025.