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Numerical study of synaptic behavior in amorphous HfO2-based ferroelectric-like FETs generated by voltage-driven ion migration

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Cuesta-Lopez, Juan, Ganeriwala, Mohit D., Marin, Enrique G., Toral-Lopez, Alejandro, Pasadas, Francisco, Ruiz, Francisco G., Godoy, Andres
Format:	Preprint
Publié:	2025
Sujets:	Materials Science Computational Physics
Accès en ligne:	Acceder al recurso
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