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Numerical study of synaptic behavior in amorphous HfO2-based ferroelectric-like FETs generated by voltage-driven ion migration

Fuente: arXiv
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Bibliographic Details
Main Authors: Cuesta-Lopez, Juan, Ganeriwala, Mohit D., Marin, Enrique G., Toral-Lopez, Alejandro, Pasadas, Francisco, Ruiz, Francisco G., Godoy, Andres
Format: Preprint
Published: 2025
Subjects:
Materials Science
Computational Physics
Online Access:
Acceder al recurso
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