:: Library Catalog

Cover Image

Saved in:

Bibliographic Details
Main Authors:	Marín, Francisca, Mohamed, Ijaas, Brandt, Oliver, Geelhaar, Lutz
Format:	Preprint
Published:	2025
Subjects:	Applied Physics
Online Access:	https://arxiv.org/abs/2502.17220
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing
by: Kang, Jingxuan, et al.
Published: (2025)

Polarity-induced selective area epitaxy of GaN nanowires
by: Schiaber, Ziani de Souza, et al.
Published: (2024)

Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy
by: Ruiz, M Gómez, et al.
Published: (2023)

Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles
by: Kang, Jingxuan, et al.
Published: (2024)

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
by: Zettler, Johannes K., et al.
Published: (2024)

Fabrication of (In,Ga)N pseudo-substrates by a three-step growth protocol without ex-situ processing
by: Zhang, Huaide, et al.
Published: (2025)

Nonreciprocal and temperature-tunable light absorption in AlAs/ITO/GaAs Hybrid Metasurfaces
by: Chen, Yi, et al.
Published: (2025)

Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy
by: Kang, Jingxuan, et al.
Published: (2024)

Strain distribution in zincblende and wurtzite GaAs nanowires bent by a one-sided (In, Al)As stressor shell: consequences for torsion, chirality, and piezoelectricity
by: Hadjimichael, Yiannis, et al.
Published: (2025)

Monolithic axial InGaAs quantum dot emitters in GaAs-based nanowires via Sb-mediated facet engineering
by: Jeong, Hyowon W., et al.
Published: (2026)

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles
by: Fernández-Garrido, Sergio, et al.
Published: (2024)

Electric-field-assisted phase switching for crystal phase quantum dot fabrication in GaAs nanowires
by: Yu, Qiang, et al.
Published: (2025)

An alternative application of GaAs-based light-emitting diodes: X-ray detection and imaging
by: Yu, Quan, et al.
Published: (2025)

High-Frequency GaAs Optomechanical Bullseye Resonator
by: Carvalho, N. C., et al.
Published: (2020)

Electronic properties of metamorphic GaSbBi films on GaAs
by: Hilska, Joonas, et al.
Published: (2024)

On-chip GaAs carrier lifetime investigation
by: Prayoonyong, Chawaphon, et al.
Published: (2025)

Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure
by: Dobney, C. P., et al.
Published: (2024)

Electroluminescence in n-type GaAs unipolar nanoLEDs
by: Jacob, Bejoys, et al.
Published: (2025)

Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices
by: Lendyashova, Vera, et al.
Published: (2024)

Temperature shift of magnetic-field-dependent photoluminescence features of nitrogen-vacancy ensembles in diamond
by: Rodzoń, Irena, et al.
Published: (2024)

Arsenic diffusion in MOVPE-Grown GaAs/Ge epitaxial structures
by: Orejuela, V., et al.
Published: (2024)

Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication
by: Li, Manyang, et al.
Published: (2024)

Suppression of Phase Separation in AlGaInAs Compositionally Graded Buffers for 1550 nm Photovoltaic Converters on GaAs
by: Schulte, Kevin L., et al.
Published: (2024)

Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity
by: Fernández-Garrido, Sergio, et al.
Published: (2024)

Impact of Surface Passivation on the Efficiency and High-speed Modulation of III-V GaAs/AlGaAs Nanopillar Array LEDs
by: Jacob, Bejoys, et al.
Published: (2025)

Molecular Beam Epitaxy of Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response
by: Notarangelo, Adriano, et al.
Published: (2026)

Evolution of the surface morphology of GaSb epitaxial layers deposited by molecular beam epitaxy (MBE) on GaAs (100) substrates
by: Jarosz, Dawid, et al.
Published: (2024)

Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer
by: Zhou, Jie, et al.
Published: (2024)

Low-Power Optical Actuation of n-GaAs Cantilevers via Surface Piezoelectric Coupling
by: Prado, Ayelén, et al.
Published: (2025)

Molecular beam epitaxy of wafer-scale O-band InAs/InGaAs quantum dots on GaAs for quantum photonics
by: Avdienko, Pavel S., et al.
Published: (2026)

Single-point-diamond-turned GaAs disk resonator with over a million optical quality factor
by: Platt, Lily M., et al.
Published: (2024)

Lasing from SOI-integrated GaAsSb nanowires via resonator-driven optical feedback
by: Zöllner, J., et al.
Published: (2026)

Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources
by: Costa, Beatrice, et al.
Published: (2025)

Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting
by: Zhou, Jie, et al.
Published: (2025)

Influence of Auger heating and Shockley-Read-Hall recombination on hot carrier dynamics in InGaAs nanowires
by: Esmaielpour, Hamidreza, et al.
Published: (2024)

Sub-0.6 eV Inverted Metamorphic GaInAs Cells Grown on InP and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion
by: Schulte, Kevin L., et al.
Published: (2023)

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
by: Gunder, Calbi, et al.
Published: (2023)

Superconducting nanowire diode
by: Zhang, Xiaofu, et al.
Published: (2023)

Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in-situ and ex-situ 63 MeV proton irradiation
by: Carrasco, Rigo A., et al.
Published: (2025)

Impact of Ge substrate Thicknesses and Epitaxy Growth Conditions on the Optical and Material Properties of Ge- and GaAs-based VCSELs
by: Dong, Wenhan, et al.
Published: (2025)