Luttinger compensated bipolarized magnetic semiconductor

Fuente: arXiv
Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Guo, Peng-Jie, Hou, Xiao-Yao, Gao, Ze-Feng, Yang, Huan-Cheng, Ji, Wei, Lu, Zhong-Yi
Format: Preprint
Veröffentlicht: 2025
Schlagworte:
Online-Zugang:
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
_version_ 1866912245474131968
author Guo, Peng-Jie
Hou, Xiao-Yao
Gao, Ze-Feng
Yang, Huan-Cheng
Ji, Wei
Lu, Zhong-Yi
author_facet Guo, Peng-Jie
Hou, Xiao-Yao
Gao, Ze-Feng
Yang, Huan-Cheng
Ji, Wei
Lu, Zhong-Yi
contents Altermagnetic materials, with real-space antiferromagnetic arrangement and reciprocal-space anisotropic spin splitting, have attracted much attention. However, the spin splitting is small in most altermagnetic materials, which is a disadvantage to their application in electronic devices. In this study, based on symmetry analysis and the first-principles electronic structure calculations, we predict for the first time two Luttinger compensated bipolarized magnetic semiconductors Mn(CN)2 and Co(CN)2 with isotropic spin splitting as in the ferromagnetic materials. Our further analysis shows that the Luttinger compensated magnetism here depends not only on spin group symmetry, but also on the crystal field splitting and the number of d-orbital electrons. In addition, the polarized charge density indicates that both Mn(CN)2 and Co(CN)2 have the quasi-symmetry Tτ , resulting from the crystal field splitting and the number of d-orbital electrons. The Luttinger compensated magnetism not only has the zero total magnetic moment as the antiferromagnetism, but also has the isotropic spin splitting as the ferromagnetism, thus our work not only provides theoretical guidance for searching Luttinger compensated magnetic materials with distinctive properties, but also provides a material basis for the application in spintronic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2502_18136
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Luttinger compensated bipolarized magnetic semiconductor
Guo, Peng-Jie
Hou, Xiao-Yao
Gao, Ze-Feng
Yang, Huan-Cheng
Ji, Wei
Lu, Zhong-Yi
Materials Science
Altermagnetic materials, with real-space antiferromagnetic arrangement and reciprocal-space anisotropic spin splitting, have attracted much attention. However, the spin splitting is small in most altermagnetic materials, which is a disadvantage to their application in electronic devices. In this study, based on symmetry analysis and the first-principles electronic structure calculations, we predict for the first time two Luttinger compensated bipolarized magnetic semiconductors Mn(CN)2 and Co(CN)2 with isotropic spin splitting as in the ferromagnetic materials. Our further analysis shows that the Luttinger compensated magnetism here depends not only on spin group symmetry, but also on the crystal field splitting and the number of d-orbital electrons. In addition, the polarized charge density indicates that both Mn(CN)2 and Co(CN)2 have the quasi-symmetry Tτ , resulting from the crystal field splitting and the number of d-orbital electrons. The Luttinger compensated magnetism not only has the zero total magnetic moment as the antiferromagnetism, but also has the isotropic spin splitting as the ferromagnetism, thus our work not only provides theoretical guidance for searching Luttinger compensated magnetic materials with distinctive properties, but also provides a material basis for the application in spintronic devices.
title Luttinger compensated bipolarized magnetic semiconductor
topic Materials Science
url https://arxiv.org/abs/2502.18136