Boundary-induced helical bulk acoustic transport in LiNbO3 thin films

Fuente: arXiv
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Hauptverfasser: Li, Zhe, Qin, Zhen-Hui, Wu, Shu-Mao, Hao, Chen-Bei, Pan, Fan-Yun, Yan, Hao, He, Yi-Han, Zhou, Yan-Shen, Yan, Xue-Jun, Yu, Si-Yuan, He, Cheng, Lu, Ming-Hui, Chen, Yan-Feng
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Veröffentlicht: 2025
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author Li, Zhe
Qin, Zhen-Hui
Wu, Shu-Mao
Hao, Chen-Bei
Pan, Fan-Yun
Yan, Hao
He, Yi-Han
Zhou, Yan-Shen
Yan, Xue-Jun
Yu, Si-Yuan
He, Cheng
Lu, Ming-Hui
Chen, Yan-Feng
author_facet Li, Zhe
Qin, Zhen-Hui
Wu, Shu-Mao
Hao, Chen-Bei
Pan, Fan-Yun
Yan, Hao
He, Yi-Han
Zhou, Yan-Shen
Yan, Xue-Jun
Yu, Si-Yuan
He, Cheng
Lu, Ming-Hui
Chen, Yan-Feng
contents We experimentally demonstrate boundary-induced helical bulk states (BI-HBSs) for RF acoustic transport in LiNbO3 thin-film phononic crystals (approximately 175-200 MHz). A boundary-symmetry selection rule at an accidental Γ-point fourfold degeneracy creates interior bulk channels that couple to wide-aperture interdigital transducers without edge-aperture mismatch. Near-field vibrometry and two-port RF S-parameters confirm low-loss propagation with strongly suppressed backscattering through wavelength-scale defects. The helical band also provides slow-wave, low-dispersion delay and phase control on chip.
format Preprint
id arxiv_https___arxiv_org_abs_2502_18385
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Boundary-induced helical bulk acoustic transport in LiNbO3 thin films
Li, Zhe
Qin, Zhen-Hui
Wu, Shu-Mao
Hao, Chen-Bei
Pan, Fan-Yun
Yan, Hao
He, Yi-Han
Zhou, Yan-Shen
Yan, Xue-Jun
Yu, Si-Yuan
He, Cheng
Lu, Ming-Hui
Chen, Yan-Feng
Applied Physics
Mesoscale and Nanoscale Physics
Materials Science
We experimentally demonstrate boundary-induced helical bulk states (BI-HBSs) for RF acoustic transport in LiNbO3 thin-film phononic crystals (approximately 175-200 MHz). A boundary-symmetry selection rule at an accidental Γ-point fourfold degeneracy creates interior bulk channels that couple to wide-aperture interdigital transducers without edge-aperture mismatch. Near-field vibrometry and two-port RF S-parameters confirm low-loss propagation with strongly suppressed backscattering through wavelength-scale defects. The helical band also provides slow-wave, low-dispersion delay and phase control on chip.
title Boundary-induced helical bulk acoustic transport in LiNbO3 thin films
topic Applied Physics
Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2502.18385