Growth and characterization of single crystal cubic TaN and hexagonal Ta$_2$N films on c-plane Sapphire
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arXiv
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| Natura: | Preprint |
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2025
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| _version_ | 1866915323020574720 |
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| author | Ithepalli, Anand Rajapurohita, Amit Rohan Singh, Arjan Singh, Rishabh Wright, John Rana, Farhan Fatemi, Valla Huili Jena, Debdeep |
| author_facet | Ithepalli, Anand Rajapurohita, Amit Rohan Singh, Arjan Singh, Rishabh Wright, John Rana, Farhan Fatemi, Valla Huili Jena, Debdeep |
| contents | Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be $δ$-TaN with a rocksalt cubic structure and $γ$-Ta$_2$N with a hexagonal structure. Atomic force microscopy scans revealed smooth surfaces for both the films with root mean square roughnesses less than 0.3 nm. Phase-purity of these films was determined by x-ray diffraction. Raman spectrum of the phase-pure $δ$-TaN and $γ$-Ta$_2$N obtained will serve as a future reference to determine phase-purity of tantalum nitride films. Further, the room-temperature and low-temperature electronic transport measurements indicated that both of these phases are metallic at room temperature with resistivities of 586.2 $μΩ$-cm for the 30 nm $δ$-TaN film and 75.5 $μΩ$-cm for the 38 nm $γ$-Ta$_2$N film and become superconducting below 3.6 K and 0.48 K respectively. The superconducting transition temperature reduces with applied magnetic field as expected. Ginzburg-Landau fitting revealed a 0 K critical magnetic field and coherence length of 18 T and 4.2 nm for the 30 nm $δ$-TaN film and 96 mT and 59 nm for the 38 nm $γ$-Ta$_2$N film. These tantalum nitride films are of high interest for superconducting resonators and qubits. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_18723 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Growth and characterization of single crystal cubic TaN and hexagonal Ta$_2$N films on c-plane Sapphire Ithepalli, Anand Rajapurohita, Amit Rohan Singh, Arjan Singh, Rishabh Wright, John Rana, Farhan Fatemi, Valla Huili Jena, Debdeep Superconductivity Materials Science Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be $δ$-TaN with a rocksalt cubic structure and $γ$-Ta$_2$N with a hexagonal structure. Atomic force microscopy scans revealed smooth surfaces for both the films with root mean square roughnesses less than 0.3 nm. Phase-purity of these films was determined by x-ray diffraction. Raman spectrum of the phase-pure $δ$-TaN and $γ$-Ta$_2$N obtained will serve as a future reference to determine phase-purity of tantalum nitride films. Further, the room-temperature and low-temperature electronic transport measurements indicated that both of these phases are metallic at room temperature with resistivities of 586.2 $μΩ$-cm for the 30 nm $δ$-TaN film and 75.5 $μΩ$-cm for the 38 nm $γ$-Ta$_2$N film and become superconducting below 3.6 K and 0.48 K respectively. The superconducting transition temperature reduces with applied magnetic field as expected. Ginzburg-Landau fitting revealed a 0 K critical magnetic field and coherence length of 18 T and 4.2 nm for the 30 nm $δ$-TaN film and 96 mT and 59 nm for the 38 nm $γ$-Ta$_2$N film. These tantalum nitride films are of high interest for superconducting resonators and qubits. |
| title | Growth and characterization of single crystal cubic TaN and hexagonal Ta$_2$N films on c-plane Sapphire |
| topic | Superconductivity Materials Science |
| url | https://arxiv.org/abs/2502.18723 |