Colossal magnetoresistance in a quasi-two-dimensional cluster glass semiconductor

Fuente: arXiv
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Autori principali: Pradhan, Suman Kalyan, Liu, Weiqi, Wang, Jicheng, Yu, Yongli, Chen, Wenxing, Yang, Jinbo, Hou, Yanglong, Wu, Rui
Natura: Preprint
Pubblicazione: 2025
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author Pradhan, Suman Kalyan
Liu, Weiqi
Wang, Jicheng
Yu, Yongli
Chen, Wenxing
Yang, Jinbo
Hou, Yanglong
Wu, Rui
author_facet Pradhan, Suman Kalyan
Liu, Weiqi
Wang, Jicheng
Yu, Yongli
Chen, Wenxing
Yang, Jinbo
Hou, Yanglong
Wu, Rui
contents With a surge of interest in spintronics, the manipulation and detection of colossal magnetoresistance in quasi-two-dimensional layered magnetic materials have become a key focus, driven by their relatively scarce occurrence compared to giant magnetoresistance and tunneling magnetoresistance. This study presents an investigation into the desired colossal magnetoresistance, achieved by introducing magnetic frustration through Te doping in quasi-two-dimensional antiferromagnet Cr2Se3 matrix. The resulting Cr0.98SeTe0.27 exhibits cluster glass-like behavior with a freezing temperature of 28 K. Magnetotransport studies reveal a significant negative magnetoresistance of up to 32%. Additionally, angle-dependent transport measurements demonstrate a magnetic field-induced transition from positive to negative resistance anisotropy, suggesting a magnetic field-driven alteration in the electronic structure of this narrow band gap semiconductor, a characteristic feature of the colossal magnetoresistance effect. This behavior is further corroborated by density functional theory calculations. This systematic investigation provides a crucial understanding of the control of colossal magnetoresistance in quasi-two-dimensional materials via competing exchange interactions.
format Preprint
id arxiv_https___arxiv_org_abs_2502_18732
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Colossal magnetoresistance in a quasi-two-dimensional cluster glass semiconductor
Pradhan, Suman Kalyan
Liu, Weiqi
Wang, Jicheng
Yu, Yongli
Chen, Wenxing
Yang, Jinbo
Hou, Yanglong
Wu, Rui
Materials Science
Mesoscale and Nanoscale Physics
With a surge of interest in spintronics, the manipulation and detection of colossal magnetoresistance in quasi-two-dimensional layered magnetic materials have become a key focus, driven by their relatively scarce occurrence compared to giant magnetoresistance and tunneling magnetoresistance. This study presents an investigation into the desired colossal magnetoresistance, achieved by introducing magnetic frustration through Te doping in quasi-two-dimensional antiferromagnet Cr2Se3 matrix. The resulting Cr0.98SeTe0.27 exhibits cluster glass-like behavior with a freezing temperature of 28 K. Magnetotransport studies reveal a significant negative magnetoresistance of up to 32%. Additionally, angle-dependent transport measurements demonstrate a magnetic field-induced transition from positive to negative resistance anisotropy, suggesting a magnetic field-driven alteration in the electronic structure of this narrow band gap semiconductor, a characteristic feature of the colossal magnetoresistance effect. This behavior is further corroborated by density functional theory calculations. This systematic investigation provides a crucial understanding of the control of colossal magnetoresistance in quasi-two-dimensional materials via competing exchange interactions.
title Colossal magnetoresistance in a quasi-two-dimensional cluster glass semiconductor
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2502.18732