Reactive sputtering of SnS thin films using sulfur plasma and a metallic tin target: achieving stoichiometry and large grains
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| Main Authors: | , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866917964353110016 |
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| author | Motai, Daiki Suzuki, Issei Nogami, Taichi Omata, Takahisa |
| author_facet | Motai, Daiki Suzuki, Issei Nogami, Taichi Omata, Takahisa |
| contents | This study presents a novel method for fabricating stoichiometric SnS thin films with large grain sizes via reactive sputtering using a metallic Sn target and sulfur plasma (S-plasma). Unlike conventional approaches that rely on toxic H2S gas, this method employs a S-plasma to enhance sulfur reactivity and mitigate sulfur deficiencies during film deposition. By optimizing the balance between the sputtering conditions of the Sn target and the supply conditions of the S-plasma, dense single-phase SnS thin films with micron-scale grain sizes were achieved at a substrate temperature of 300 degree C, achieving an in-plane Hall mobility of 13 cm2 V-1 s-1. Furthermore, crystalline SnS thin films were fabricated even on a room-temperature substrate, enabling potential applications in flexible devices with heat-sensitive substrates. These findings demonstrate the effectiveness of S-plasma in advancing SnS thin film fabrication, providing a safer and more efficient route to high-performance photovoltaic materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_18922 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Reactive sputtering of SnS thin films using sulfur plasma and a metallic tin target: achieving stoichiometry and large grains Motai, Daiki Suzuki, Issei Nogami, Taichi Omata, Takahisa Materials Science This study presents a novel method for fabricating stoichiometric SnS thin films with large grain sizes via reactive sputtering using a metallic Sn target and sulfur plasma (S-plasma). Unlike conventional approaches that rely on toxic H2S gas, this method employs a S-plasma to enhance sulfur reactivity and mitigate sulfur deficiencies during film deposition. By optimizing the balance between the sputtering conditions of the Sn target and the supply conditions of the S-plasma, dense single-phase SnS thin films with micron-scale grain sizes were achieved at a substrate temperature of 300 degree C, achieving an in-plane Hall mobility of 13 cm2 V-1 s-1. Furthermore, crystalline SnS thin films were fabricated even on a room-temperature substrate, enabling potential applications in flexible devices with heat-sensitive substrates. These findings demonstrate the effectiveness of S-plasma in advancing SnS thin film fabrication, providing a safer and more efficient route to high-performance photovoltaic materials. |
| title | Reactive sputtering of SnS thin films using sulfur plasma and a metallic tin target: achieving stoichiometry and large grains |
| topic | Materials Science |
| url | https://arxiv.org/abs/2502.18922 |