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| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2502.18946 |
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| _version_ | 1866910140678012928 |
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| author | Chen, Jingxin Huang, Xiang Qiao, Zhihan Li, Jiao Xu, Jiahao Zhang, Haiyang Li, Deyang Men, Enyang Wang, Hangtian Zhang, Han Xie, Jianyu Zheng, Guolin Tian, Mingliang Niu, Qun Hao, Lin |
| author_facet | Chen, Jingxin Huang, Xiang Qiao, Zhihan Li, Jiao Xu, Jiahao Zhang, Haiyang Li, Deyang Men, Enyang Wang, Hangtian Zhang, Han Xie, Jianyu Zheng, Guolin Tian, Mingliang Niu, Qun Hao, Lin |
| contents | Electrical transport in oxide thin films under high pressure remains largely unexplored due to the lack of a universal experimental strategy. Here we develop an approach that enables high-pressure transport measurements in freestanding oxide films by enhancing their mechanical robustness and integrating them with nanoscale high-pressure devices. As a demonstration, we investigate the resistivity of perovskite SrIrO3 films under hydrostatic pressure and uncover a pressure-driven semimetal-insulator transition near 2.5 GPa, followed by an insulator-metal transition around 9 GPa. In the monolayer limit, SrIrO3 remains insulating and robust against pressure up to 5.5 GPa. The contrasting pressure-dependent phase diagrams of three- and two-dimensional iridates reveal a strong interplay between dimensionality and hydrostatic pressure in correlated oxides. Our work establishes a general platform for exploring pressure-driven phenomena in low-dimensional quantum materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_18946 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High-Pressure Tuning of Electrical Transport in Freestanding Oxide Films Chen, Jingxin Huang, Xiang Qiao, Zhihan Li, Jiao Xu, Jiahao Zhang, Haiyang Li, Deyang Men, Enyang Wang, Hangtian Zhang, Han Xie, Jianyu Zheng, Guolin Tian, Mingliang Niu, Qun Hao, Lin Materials Science Strongly Correlated Electrons Electrical transport in oxide thin films under high pressure remains largely unexplored due to the lack of a universal experimental strategy. Here we develop an approach that enables high-pressure transport measurements in freestanding oxide films by enhancing their mechanical robustness and integrating them with nanoscale high-pressure devices. As a demonstration, we investigate the resistivity of perovskite SrIrO3 films under hydrostatic pressure and uncover a pressure-driven semimetal-insulator transition near 2.5 GPa, followed by an insulator-metal transition around 9 GPa. In the monolayer limit, SrIrO3 remains insulating and robust against pressure up to 5.5 GPa. The contrasting pressure-dependent phase diagrams of three- and two-dimensional iridates reveal a strong interplay between dimensionality and hydrostatic pressure in correlated oxides. Our work establishes a general platform for exploring pressure-driven phenomena in low-dimensional quantum materials. |
| title | High-Pressure Tuning of Electrical Transport in Freestanding Oxide Films |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2502.18946 |