ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires

Fuente: arXiv

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Bibliographic Details
Main Authors:	Tiagulskyi, Stanislav, Yatskiv, Roman, Sobanska, Marta, Olszewski, Karol, Zytkiewicz, Zbigniew R., Grym, Jan
Format:	Preprint
Published:	2025
Subjects:	Mesoscale and Nanoscale Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2502.19129