Epitaxial high-K AlBN barrier GaN HEMTs
Fuente:
arXiv
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| Autori principali: | , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866917937493835776 |
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| author | Savant, Chandrashekhar Nguyen, Thai-Son Nomoto, Kazuki Vishwakarma, Saurabh Ma, Siyuan Dhar, Akshey Chen, Yu-Hsin Casamento, Joseph Smith, David J. Xing, Huili Grace Jena, Debdeep |
| author_facet | Savant, Chandrashekhar Nguyen, Thai-Son Nomoto, Kazuki Vishwakarma, Saurabh Ma, Siyuan Dhar, Akshey Chen, Yu-Hsin Casamento, Joseph Smith, David J. Xing, Huili Grace Jena, Debdeep |
| contents | We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors that exhibit current densities of more than 0.25 A/mm, clean current saturation, a low pinch-off voltage of -0.43 V, and a peak transconductance of 0.14 S/mm. Transistor performance in this preliminary realization is limited by the contact resistance. Capacitance-voltage measurements reveal that introducing 7 % B in the epitaxial AlBN barrier on GaN boosts the relative dielectric constant of AlBN to 16, higher than the AlN dielectric constant of 9. Epitaxial high-K barrier AlBN/GaN HEMTs can thus extend performance beyond the capabilities of current GaN transistors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_19315 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Epitaxial high-K AlBN barrier GaN HEMTs Savant, Chandrashekhar Nguyen, Thai-Son Nomoto, Kazuki Vishwakarma, Saurabh Ma, Siyuan Dhar, Akshey Chen, Yu-Hsin Casamento, Joseph Smith, David J. Xing, Huili Grace Jena, Debdeep Applied Physics Mesoscale and Nanoscale Physics Materials Science Systems and Control Chemical Physics We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors that exhibit current densities of more than 0.25 A/mm, clean current saturation, a low pinch-off voltage of -0.43 V, and a peak transconductance of 0.14 S/mm. Transistor performance in this preliminary realization is limited by the contact resistance. Capacitance-voltage measurements reveal that introducing 7 % B in the epitaxial AlBN barrier on GaN boosts the relative dielectric constant of AlBN to 16, higher than the AlN dielectric constant of 9. Epitaxial high-K barrier AlBN/GaN HEMTs can thus extend performance beyond the capabilities of current GaN transistors. |
| title | Epitaxial high-K AlBN barrier GaN HEMTs |
| topic | Applied Physics Mesoscale and Nanoscale Physics Materials Science Systems and Control Chemical Physics |
| url | https://arxiv.org/abs/2502.19315 |