Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866929734027313152 |
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| author | Sun, Wenxuan Chen, Yequan Xu, Ruijie Zhuang, Wenzhuo Wang, Di Liu, Long Song, Anke Xing, Guozhong Xu, Yongbing Zhang, Rong Chang, Cui-Zu Wang, Xuefeng |
| author_facet | Sun, Wenxuan Chen, Yequan Xu, Ruijie Zhuang, Wenzhuo Wang, Di Liu, Long Song, Anke Xing, Guozhong Xu, Yongbing Zhang, Rong Chang, Cui-Zu Wang, Xuefeng |
| contents | Over the past decade, topological insulators have received enormous attention for their potential in energy-efficient spin-to-charge conversion, enabled by strong spin-orbit coupling and spin-momentum locked surface states. Despite extensive research, the spin-to-charge conversion efficiency, usually characterized by the spin Hall angle (θSH), remains low at room temperature. In this work, we employed pulsed laser deposition to synthesize high-quality ternary topological insulators (Bi0.1Sb0.9)2Te3 thin films on magnetic insulator Y3Fe5O12. We find that the value of θSH reaches ~0.76 at room temperature and increases to ~0.9 as the Fermi level is tuned to cross topological surface states via electrical gating. Our findings provide an innovative approach to tailoring the spin-to-charge conversion in topological insulators and pave the way for their applications in energy-efficient spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_19736 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature Sun, Wenxuan Chen, Yequan Xu, Ruijie Zhuang, Wenzhuo Wang, Di Liu, Long Song, Anke Xing, Guozhong Xu, Yongbing Zhang, Rong Chang, Cui-Zu Wang, Xuefeng Mesoscale and Nanoscale Physics Materials Science Over the past decade, topological insulators have received enormous attention for their potential in energy-efficient spin-to-charge conversion, enabled by strong spin-orbit coupling and spin-momentum locked surface states. Despite extensive research, the spin-to-charge conversion efficiency, usually characterized by the spin Hall angle (θSH), remains low at room temperature. In this work, we employed pulsed laser deposition to synthesize high-quality ternary topological insulators (Bi0.1Sb0.9)2Te3 thin films on magnetic insulator Y3Fe5O12. We find that the value of θSH reaches ~0.76 at room temperature and increases to ~0.9 as the Fermi level is tuned to cross topological surface states via electrical gating. Our findings provide an innovative approach to tailoring the spin-to-charge conversion in topological insulators and pave the way for their applications in energy-efficient spintronic devices. |
| title | Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2502.19736 |