Low Tc Hafnium Kinetic Inductance Device with High Internal Quality Factor

Fuente: arXiv
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Autori principali: Li, Xinran, Suzuki, Aritoki, Garcia-Sciveres, Maurice
Natura: Preprint
Pubblicazione: 2025
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author Li, Xinran
Suzuki, Aritoki
Garcia-Sciveres, Maurice
author_facet Li, Xinran
Suzuki, Aritoki
Garcia-Sciveres, Maurice
contents Kinetic inductance devices (KIDs) are superconducting resonators with high kinetic inductance sensitive to external energy perturbations. KIDs made with superconductors having $T_c$ far below one Kelvin are of particular interest for sensing minuscule signals, such as light dark matter detection and millimeter wave telescopes for astronomy and cosmology. In this work, we report the promising performance of KIDs fabricated with Hafnium from heated sputter depositions. The KIDs have $T_c$ lower than 249$\pm$2 mK, the internal quality factor ($Q_i$) of the resonators exceeds $10^5$ and the temperature dependence of the resonances can be described by the generalized Mattis-Bardeen model with a disorder parameter $Γ=4\times10^{-3}Δ_0$. Post-fabrication annealing at temperatures above the deposition temperature can further reduce the $T_c$ and $Γ$ without reducing $Q_i$, leading to improvements in energy resolution.
format Preprint
id arxiv_https___arxiv_org_abs_2502_19818
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Low Tc Hafnium Kinetic Inductance Device with High Internal Quality Factor
Li, Xinran
Suzuki, Aritoki
Garcia-Sciveres, Maurice
High Energy Physics - Experiment
Kinetic inductance devices (KIDs) are superconducting resonators with high kinetic inductance sensitive to external energy perturbations. KIDs made with superconductors having $T_c$ far below one Kelvin are of particular interest for sensing minuscule signals, such as light dark matter detection and millimeter wave telescopes for astronomy and cosmology. In this work, we report the promising performance of KIDs fabricated with Hafnium from heated sputter depositions. The KIDs have $T_c$ lower than 249$\pm$2 mK, the internal quality factor ($Q_i$) of the resonators exceeds $10^5$ and the temperature dependence of the resonances can be described by the generalized Mattis-Bardeen model with a disorder parameter $Γ=4\times10^{-3}Δ_0$. Post-fabrication annealing at temperatures above the deposition temperature can further reduce the $T_c$ and $Γ$ without reducing $Q_i$, leading to improvements in energy resolution.
title Low Tc Hafnium Kinetic Inductance Device with High Internal Quality Factor
topic High Energy Physics - Experiment
url https://arxiv.org/abs/2502.19818