Effect of a uniaxial strain on optical spin orientation in cubic semiconductors
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arXiv
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| Autores principales: | , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866909514806067200 |
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| author | Amand, T. Paget, D. |
| author_facet | Amand, T. Paget, D. |
| contents | The effect of a uniaxial strain on the optical spin orientation of a cubic semiconductor is investigated by calculating the valence wavefunctions, the optical oscillator strengths and the initial electron spin polarization for near resonant light excitation from heavy and light valence levels. A strain orientation along the [001], [111] or [-110] crystal direction and a circularly-polarized light excitation parallel or perpendicular to the strain are considered. For all these cases, the total conduction electron spin polarization has a universal character since i) the oscillator strengths do not depend on the magnitude of the strain but only on its sign. ii) Although the oscillator strengths strongly depend on the configuration, the conduction electron spin polarization generated by optical transitions from both the heavy and light valence levels induced by sigma + light excitation is in all cases equal to -0.5 as predicted by the simple atomic model. iii) The spin polarization generated by light excitation from heavy and light valence levels does not depend on the deformation tensor and on the valence deformation potential, except for a strain along [-110]. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_20005 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Effect of a uniaxial strain on optical spin orientation in cubic semiconductors Amand, T. Paget, D. Mesoscale and Nanoscale Physics Materials Science The effect of a uniaxial strain on the optical spin orientation of a cubic semiconductor is investigated by calculating the valence wavefunctions, the optical oscillator strengths and the initial electron spin polarization for near resonant light excitation from heavy and light valence levels. A strain orientation along the [001], [111] or [-110] crystal direction and a circularly-polarized light excitation parallel or perpendicular to the strain are considered. For all these cases, the total conduction electron spin polarization has a universal character since i) the oscillator strengths do not depend on the magnitude of the strain but only on its sign. ii) Although the oscillator strengths strongly depend on the configuration, the conduction electron spin polarization generated by optical transitions from both the heavy and light valence levels induced by sigma + light excitation is in all cases equal to -0.5 as predicted by the simple atomic model. iii) The spin polarization generated by light excitation from heavy and light valence levels does not depend on the deformation tensor and on the valence deformation potential, except for a strain along [-110]. |
| title | Effect of a uniaxial strain on optical spin orientation in cubic semiconductors |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2502.20005 |