Theory of Slidetronics in Ferroelectric van der Waals Layers
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arXiv
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| Auteurs principaux: | , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866929735458619392 |
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| author | Lee, Byeoksong Lee, Minki Kang, Joongoo |
| author_facet | Lee, Byeoksong Lee, Minki Kang, Joongoo |
| contents | Vertically stacked layers derived from non-ferroelectric monolayers offer a promising route to two-dimensional (2D) ferroelectrics, where polarization switching occurs via interlayer sliding at sub-unit cell scales. Here, we develop a theory of slidetronics based on the notion that sliding-induced switching $P \rightarrow P'$ can also be achieved by applying an appropriate point-group operator $G$ to the entire system, such that $P' = G P$. Interlayer sliding and the transformation induced by the generator $G$ are thus equivalent in describing the relationship between the initial and final layer configurations. From this symmetry principle, we deduce that slidetronics can be classified by generators $G$; the generator $G$ must act as a symmetry operator for the constituent layers, while it is not a symmetry operator for the stacked layers as a whole; for a given 2D material, $G$ determines the interlayer sliding required for polarization switching; and sliding-induced complete polarization inversion is impossible in bilayers but can be realized in multilayers (e.g., PdSe$_2$ trilayers). These findings provide a framework for designing 2D ferroelectrics with targeted polarization-switching properties, as demonstrated through case studies of real materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_20832 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Theory of Slidetronics in Ferroelectric van der Waals Layers Lee, Byeoksong Lee, Minki Kang, Joongoo Materials Science Mesoscale and Nanoscale Physics Vertically stacked layers derived from non-ferroelectric monolayers offer a promising route to two-dimensional (2D) ferroelectrics, where polarization switching occurs via interlayer sliding at sub-unit cell scales. Here, we develop a theory of slidetronics based on the notion that sliding-induced switching $P \rightarrow P'$ can also be achieved by applying an appropriate point-group operator $G$ to the entire system, such that $P' = G P$. Interlayer sliding and the transformation induced by the generator $G$ are thus equivalent in describing the relationship between the initial and final layer configurations. From this symmetry principle, we deduce that slidetronics can be classified by generators $G$; the generator $G$ must act as a symmetry operator for the constituent layers, while it is not a symmetry operator for the stacked layers as a whole; for a given 2D material, $G$ determines the interlayer sliding required for polarization switching; and sliding-induced complete polarization inversion is impossible in bilayers but can be realized in multilayers (e.g., PdSe$_2$ trilayers). These findings provide a framework for designing 2D ferroelectrics with targeted polarization-switching properties, as demonstrated through case studies of real materials. |
| title | Theory of Slidetronics in Ferroelectric van der Waals Layers |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2502.20832 |