Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs

Fuente: arXiv

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Bibliographic Details
Main Authors:	Wendoloski, J. P., Hillier, J., Liles, S. D., Rendell, M., Ashlea-Alava, Y., Raes, B., Li, R., Kubicek, S., Godfrin, C., Jussot, J., Beyne, S., Wan, D., Rahman, Md. M., Yianni, S., Chan, K. W., Hudson, F. E., Lim, W. H., De Greve, K., Dzurak, A. S., Hamilton, A. R.
Format:	Preprint
Published:	2025
Subjects:	Mesoscale and Nanoscale Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2502.21173