Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
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arXiv
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| Natura: | Preprint |
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2025
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| author | Wendoloski, J. P. Hillier, J. Liles, S. D. Rendell, M. Ashlea-Alava, Y. Raes, B. Li, R. Kubicek, S. Godfrin, C. Jussot, J. Beyne, S. Wan, D. Rahman, Md. M. Yianni, S. Chan, K. W. Hudson, F. E. Lim, W. H. De Greve, K. Dzurak, A. S. Hamilton, A. R. |
| author_facet | Wendoloski, J. P. Hillier, J. Liles, S. D. Rendell, M. Ashlea-Alava, Y. Raes, B. Li, R. Kubicek, S. Godfrin, C. Jussot, J. Beyne, S. Wan, D. Rahman, Md. M. Yianni, S. Chan, K. W. Hudson, F. E. Lim, W. H. De Greve, K. Dzurak, A. S. Hamilton, A. R. |
| contents | The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobility measurements on silicon Hall bars. We find a peak electron mobility of nearly $40,000\,\text{cm}^2/\text{Vs}$ in a device with a $21\,\text{nm}$ oxide layer, and a peak hole mobility of about $2,000\,\text{cm}^2/\text{Vs}$ in a device with $8\,\text{nm}$ oxide, the latter being the highest recorded mobility for a p-type silicon MOSFET. Despite the high device quality, we note an order-of-magnitude difference in mobility between electrons and holes. By studying additional n-type and p-type devices with identical oxides, and fitting to transport theory, we show that this mobility discrepancy is due to valence band nonparabolicity. The nonparabolicity endows holes with a density-dependent transverse effective mass ranging from $0.6m_0$ to $0.7m_0$, significantly larger than the usually quoted bend-edge mass of $0.22m_0$. Finally, we perform magnetotransport measurements to extract momentum and quantum scattering lifetimes. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_21173 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs Wendoloski, J. P. Hillier, J. Liles, S. D. Rendell, M. Ashlea-Alava, Y. Raes, B. Li, R. Kubicek, S. Godfrin, C. Jussot, J. Beyne, S. Wan, D. Rahman, Md. M. Yianni, S. Chan, K. W. Hudson, F. E. Lim, W. H. De Greve, K. Dzurak, A. S. Hamilton, A. R. Mesoscale and Nanoscale Physics The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobility measurements on silicon Hall bars. We find a peak electron mobility of nearly $40,000\,\text{cm}^2/\text{Vs}$ in a device with a $21\,\text{nm}$ oxide layer, and a peak hole mobility of about $2,000\,\text{cm}^2/\text{Vs}$ in a device with $8\,\text{nm}$ oxide, the latter being the highest recorded mobility for a p-type silicon MOSFET. Despite the high device quality, we note an order-of-magnitude difference in mobility between electrons and holes. By studying additional n-type and p-type devices with identical oxides, and fitting to transport theory, we show that this mobility discrepancy is due to valence band nonparabolicity. The nonparabolicity endows holes with a density-dependent transverse effective mass ranging from $0.6m_0$ to $0.7m_0$, significantly larger than the usually quoted bend-edge mass of $0.22m_0$. Finally, we perform magnetotransport measurements to extract momentum and quantum scattering lifetimes. |
| title | Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2502.21173 |