Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
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arXiv
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| Main Authors: | Wendoloski, J. P., Hillier, J., Liles, S. D., Rendell, M., Ashlea-Alava, Y., Raes, B., Li, R., Kubicek, S., Godfrin, C., Jussot, J., Beyne, S., Wan, D., Rahman, Md. M., Yianni, S., Chan, K. W., Hudson, F. E., Lim, W. H., De Greve, K., Dzurak, A. S., Hamilton, A. R. |
|---|---|
| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | |
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