Impact of Quantum Well Thickness on Efficiency Loss in InGaN/GaN LEDs: Challenges for Thin-Well Designs
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arXiv
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| Autores principales: | , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866912252686237696 |
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| author | Li, Xuefeng Pant, Nick Rahman, Sheikh Ifatur Armitage, Rob Rajan, Siddharth Kioupakis, Emmanouil Feezell, Daniel |
| author_facet | Li, Xuefeng Pant, Nick Rahman, Sheikh Ifatur Armitage, Rob Rajan, Siddharth Kioupakis, Emmanouil Feezell, Daniel |
| contents | We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms related to efficiency loss are independently examined, including injection efficiency, carrier density vs. current density relationship, phase space filling (PSF), quantum confined stark effect (QCSE), and Coulomb enhancement. An optimal QW thickness of around 2.7 nm in these InGaN/GaN LEDs was determined for quantum wells having constant In composition. Despite better control of deep-level defects and lower carrier density at a given current density, LEDs with thin QWs still suffer from an imbalance of enhancement effects on the radiative and intrinsic Auger-Meitner recombination coefficients. The imbalance of enhancement effects results in a decline in internal quantum efficiency (IQE) and radiative efficiency with decreasing QW thickness at low current density in LEDs with QW thicknesses below 2.7 nm. We also investigate how LED modulation bandwidth varies with quantum well thickness, identifying the key trends and their implications for device performance. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2502_21302 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Impact of Quantum Well Thickness on Efficiency Loss in InGaN/GaN LEDs: Challenges for Thin-Well Designs Li, Xuefeng Pant, Nick Rahman, Sheikh Ifatur Armitage, Rob Rajan, Siddharth Kioupakis, Emmanouil Feezell, Daniel Applied Physics We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms related to efficiency loss are independently examined, including injection efficiency, carrier density vs. current density relationship, phase space filling (PSF), quantum confined stark effect (QCSE), and Coulomb enhancement. An optimal QW thickness of around 2.7 nm in these InGaN/GaN LEDs was determined for quantum wells having constant In composition. Despite better control of deep-level defects and lower carrier density at a given current density, LEDs with thin QWs still suffer from an imbalance of enhancement effects on the radiative and intrinsic Auger-Meitner recombination coefficients. The imbalance of enhancement effects results in a decline in internal quantum efficiency (IQE) and radiative efficiency with decreasing QW thickness at low current density in LEDs with QW thicknesses below 2.7 nm. We also investigate how LED modulation bandwidth varies with quantum well thickness, identifying the key trends and their implications for device performance. |
| title | Impact of Quantum Well Thickness on Efficiency Loss in InGaN/GaN LEDs: Challenges for Thin-Well Designs |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2502.21302 |