Electrical switching of Chern insulators in moire rhombohedral heptalayer graphene
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arXiv
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| Auteurs principaux: | , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866910906205601792 |
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| author | Wang, Zhiyu Liu, Qianling Han, Xiangyan Li, Zhuoxian Zhao, Wenjun Qu, Zhuangzhuang Han, Chunrui Watanabe, Kenji Taniguchi, Takashi Han, Zheng Vitto Zhou, Sicheng Tong, Bingbing Liu, Guangtong Lu, Li Liu, Jianpeng Wu, Fengcheng Lu, Jianming |
| author_facet | Wang, Zhiyu Liu, Qianling Han, Xiangyan Li, Zhuoxian Zhao, Wenjun Qu, Zhuangzhuang Han, Chunrui Watanabe, Kenji Taniguchi, Takashi Han, Zheng Vitto Zhou, Sicheng Tong, Bingbing Liu, Guangtong Lu, Li Liu, Jianpeng Wu, Fengcheng Lu, Jianming |
| contents | In orbital Chern insulators, the chemical potential acts as a tuning knob to reverse chirality in dissipationless edge currents, enabling electric-field control of magnetic order-key for future quantum electronics. Despite the rise of orbital Chern insulators, electrically switchable quantum anomalous Hall effect (QAHE) remains rare, necessitating further investigation. Here, we demonstrate electric-field-induced reversal of orbital Chern insulators in a moire superlattice composed of rhombohedral heptalayer graphene (r-7LG) aligned with hexagonal boron nitride. At one electron per moire unit cell, two emerging Chern insulating phases - one pointing away from and the other toward graphene's charge neutrality point in the phase diagram of carrier density (n) versus magnetic field (B) - exhibit energetic competition modulated by both n and B. This switchable QAHE chirality in r-7LG demonstrates a layer-number dependent response: similar phenomena in moire r-6LG require much higher magnetic fields and are absent in thinner rhombohedral graphene. Our findings establish moire-engineered rhombohedral graphene as a promising platform for exploring topological quantum materials with electrically controllable chiral edge modes and magnetic order. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_00837 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Electrical switching of Chern insulators in moire rhombohedral heptalayer graphene Wang, Zhiyu Liu, Qianling Han, Xiangyan Li, Zhuoxian Zhao, Wenjun Qu, Zhuangzhuang Han, Chunrui Watanabe, Kenji Taniguchi, Takashi Han, Zheng Vitto Zhou, Sicheng Tong, Bingbing Liu, Guangtong Lu, Li Liu, Jianpeng Wu, Fengcheng Lu, Jianming Mesoscale and Nanoscale Physics In orbital Chern insulators, the chemical potential acts as a tuning knob to reverse chirality in dissipationless edge currents, enabling electric-field control of magnetic order-key for future quantum electronics. Despite the rise of orbital Chern insulators, electrically switchable quantum anomalous Hall effect (QAHE) remains rare, necessitating further investigation. Here, we demonstrate electric-field-induced reversal of orbital Chern insulators in a moire superlattice composed of rhombohedral heptalayer graphene (r-7LG) aligned with hexagonal boron nitride. At one electron per moire unit cell, two emerging Chern insulating phases - one pointing away from and the other toward graphene's charge neutrality point in the phase diagram of carrier density (n) versus magnetic field (B) - exhibit energetic competition modulated by both n and B. This switchable QAHE chirality in r-7LG demonstrates a layer-number dependent response: similar phenomena in moire r-6LG require much higher magnetic fields and are absent in thinner rhombohedral graphene. Our findings establish moire-engineered rhombohedral graphene as a promising platform for exploring topological quantum materials with electrically controllable chiral edge modes and magnetic order. |
| title | Electrical switching of Chern insulators in moire rhombohedral heptalayer graphene |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2503.00837 |