Enregistré dans:
Détails bibliographiques
Auteur principal: Woods, Benjamin D.
Format: Preprint
Publié: 2025
Sujets:
Accès en ligne:https://arxiv.org/abs/2503.01797
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
_version_ 1866908572478078976
author Woods, Benjamin D.
author_facet Woods, Benjamin D.
contents The exchange interaction $J$ offers a powerful tool for quantum computation based on semiconductor spin qubits. However, the exchange interaction in two-electron systems in the absence of a magnetic field is usually constrained to be non-negative $J \geq 0$, which inhibits the construction of various dynamically corrected exchange-based gates. In this work, we show that negative exchange $J < 0$ can be realized in two-electron Si quantum dot arrays in the absence of a magnetic field due to the presence of the valley degree of freedom. Here, valley phase differences between dots produce a non-trivial $\mathbb{Z}_2$ gauge field in the low-energy effective theory, which in turn can lead to a negative exchange interaction. In addition, we show that this $\mathbb{Z}_2$ gauge field can break Nagaoka ferromagnetism and be engineered by altering the occupancy of the dot array. Therefore, our work uncovers new tools for exchange-based quantum computing and a novel setting for studying quantum magnetism.
format Preprint
id arxiv_https___arxiv_org_abs_2503_01797
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Negative exchange interaction in Si quantum dot arrays via valley-phase induced $\mathbb{Z}_2$ gauge field
Woods, Benjamin D.
Mesoscale and Nanoscale Physics
Quantum Physics
The exchange interaction $J$ offers a powerful tool for quantum computation based on semiconductor spin qubits. However, the exchange interaction in two-electron systems in the absence of a magnetic field is usually constrained to be non-negative $J \geq 0$, which inhibits the construction of various dynamically corrected exchange-based gates. In this work, we show that negative exchange $J < 0$ can be realized in two-electron Si quantum dot arrays in the absence of a magnetic field due to the presence of the valley degree of freedom. Here, valley phase differences between dots produce a non-trivial $\mathbb{Z}_2$ gauge field in the low-energy effective theory, which in turn can lead to a negative exchange interaction. In addition, we show that this $\mathbb{Z}_2$ gauge field can break Nagaoka ferromagnetism and be engineered by altering the occupancy of the dot array. Therefore, our work uncovers new tools for exchange-based quantum computing and a novel setting for studying quantum magnetism.
title Negative exchange interaction in Si quantum dot arrays via valley-phase induced $\mathbb{Z}_2$ gauge field
topic Mesoscale and Nanoscale Physics
Quantum Physics
url https://arxiv.org/abs/2503.01797