Hybrid confinement techniques for polariton simulators

Fuente: arXiv
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Hauptverfasser: Düreth, Johannes, Gagel, Philipp, Laibacher, David, Egorov, Oleg A., Widmann, Simon, Betzold, Simon, Emmerling, Monika, Dam, Siddhartha, Landry, Alexia, Mayer, Christian G., Kamp, Martin, Woyciechowska, Aniela, Piętka, Barbara, Peschel, Ulf, Höfling, Sven, Klembt, Sebastian
Format: Preprint
Veröffentlicht: 2025
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author Düreth, Johannes
Gagel, Philipp
Laibacher, David
Egorov, Oleg A.
Widmann, Simon
Betzold, Simon
Emmerling, Monika
Dam, Siddhartha
Landry, Alexia
Mayer, Christian G.
Kamp, Martin
Woyciechowska, Aniela
Piętka, Barbara
Peschel, Ulf
Höfling, Sven
Klembt, Sebastian
author_facet Düreth, Johannes
Gagel, Philipp
Laibacher, David
Egorov, Oleg A.
Widmann, Simon
Betzold, Simon
Emmerling, Monika
Dam, Siddhartha
Landry, Alexia
Mayer, Christian G.
Kamp, Martin
Woyciechowska, Aniela
Piętka, Barbara
Peschel, Ulf
Höfling, Sven
Klembt, Sebastian
contents Exciton-polariton III-V semiconductor microcavities provide a robust platform for emulating complex Hamiltonians, enabling topological photonics and quantum simulation for advanced photonic functionalities. Here, we introduce two novel fabrication techniques - etch-and-oversputter and deposit-and-oversputter - that overcome limitations of traditional photonic confinement. Both use structured, locally elongated semiconductor cavities to create deep, highly controllable potentials, while leveraging high-quality GaAs-based materials, which achieve excellent Q-factors. A sputtered all-dielectric top mirror introduces an innovative hybrid approach, simplifying fabrication while maintaining quality compared to deep ion etching. Utilizing a Kagome lattice as a benchmark, we show high-quality optical band structures previously inaccessible with deep etching. Furthermore, we study a two-dimensional breathing Kagome lattice and demonstrate polariton lasing from a zero-dimensional corner mode, confirming precise control over couplings and tight polariton localization. These methods enable fabrication of intricate lattices, including higher-order topological insulators, or on-chip quantum regimes utilizing the polariton blockade mechanism due to tight photonic confinement.
format Preprint
id arxiv_https___arxiv_org_abs_2503_02355
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Hybrid confinement techniques for polariton simulators
Düreth, Johannes
Gagel, Philipp
Laibacher, David
Egorov, Oleg A.
Widmann, Simon
Betzold, Simon
Emmerling, Monika
Dam, Siddhartha
Landry, Alexia
Mayer, Christian G.
Kamp, Martin
Woyciechowska, Aniela
Piętka, Barbara
Peschel, Ulf
Höfling, Sven
Klembt, Sebastian
Optics
Mesoscale and Nanoscale Physics
Applied Physics
Exciton-polariton III-V semiconductor microcavities provide a robust platform for emulating complex Hamiltonians, enabling topological photonics and quantum simulation for advanced photonic functionalities. Here, we introduce two novel fabrication techniques - etch-and-oversputter and deposit-and-oversputter - that overcome limitations of traditional photonic confinement. Both use structured, locally elongated semiconductor cavities to create deep, highly controllable potentials, while leveraging high-quality GaAs-based materials, which achieve excellent Q-factors. A sputtered all-dielectric top mirror introduces an innovative hybrid approach, simplifying fabrication while maintaining quality compared to deep ion etching. Utilizing a Kagome lattice as a benchmark, we show high-quality optical band structures previously inaccessible with deep etching. Furthermore, we study a two-dimensional breathing Kagome lattice and demonstrate polariton lasing from a zero-dimensional corner mode, confirming precise control over couplings and tight polariton localization. These methods enable fabrication of intricate lattices, including higher-order topological insulators, or on-chip quantum regimes utilizing the polariton blockade mechanism due to tight photonic confinement.
title Hybrid confinement techniques for polariton simulators
topic Optics
Mesoscale and Nanoscale Physics
Applied Physics
url https://arxiv.org/abs/2503.02355