Extreme Terahertz Nonlinearity of AlGaN/GaN-based Grating-Gate Plasmonic Crystals
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| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| author | Sai, Pavlo Korotyeyev, Vadym V. But, Dmytro B. Dub, Maksym Yavorskiy, Dmitriy Łusakowski, Jerzy Słowikowski, Mateusz Kukhtaruk, Serhii Liashchuk, Yurii Han, Jeong Woo Böttger, Christoph Pashkin, Alexej Winnerl, Stephan Knap, Wojciech Mittendorff, Martin |
| author_facet | Sai, Pavlo Korotyeyev, Vadym V. But, Dmytro B. Dub, Maksym Yavorskiy, Dmitriy Łusakowski, Jerzy Słowikowski, Mateusz Kukhtaruk, Serhii Liashchuk, Yurii Han, Jeong Woo Böttger, Christoph Pashkin, Alexej Winnerl, Stephan Knap, Wojciech Mittendorff, Martin |
| contents | We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear interaction of spectrally narrow THz pulses with plasmon oscillations in a two-dimensional electron gas on an AlGaN/GaN interface integrated with metallic grating. Nonlinear effects are observed as ultrafast, pump-induced changes in THz transmission, with relative transparency strongly dependent on plasmonic mode excitation and saturating at pump fluences of about 200 nJ cm-2. The maximal relative transparency, reaching 45 % at 350 nJ cm -2, occurs under resonant excitation of a localized plasmon mode at the strong electrostatic modulation of 2DEG concentration. Transient dynamics reveal ultrafast relaxation times of 15-20 ps, while the effects can be observed at elevated temperatures of up to 150 K. A nonlinear model of plasmonic crystal, based on finite-difference time-domain electrodynamic simulations coupled with viscous hydrodynamic electron transport model, elucidates key nonlinear mechanisms, including near-field effects under metallic gratings, electron heating, plasmon resonance broadening, and redshift. These results demonstrate that even conventional semiconductors such as AlGaN/GaN can achieve nonlinear THz responses comparable to or exceeding those of graphene, showing strong potential for ultrafast THz modulation and nonlinear photonics applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2503_02562 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Extreme Terahertz Nonlinearity of AlGaN/GaN-based Grating-Gate Plasmonic Crystals Sai, Pavlo Korotyeyev, Vadym V. But, Dmytro B. Dub, Maksym Yavorskiy, Dmitriy Łusakowski, Jerzy Słowikowski, Mateusz Kukhtaruk, Serhii Liashchuk, Yurii Han, Jeong Woo Böttger, Christoph Pashkin, Alexej Winnerl, Stephan Knap, Wojciech Mittendorff, Martin Optics Mesoscale and Nanoscale Physics We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear interaction of spectrally narrow THz pulses with plasmon oscillations in a two-dimensional electron gas on an AlGaN/GaN interface integrated with metallic grating. Nonlinear effects are observed as ultrafast, pump-induced changes in THz transmission, with relative transparency strongly dependent on plasmonic mode excitation and saturating at pump fluences of about 200 nJ cm-2. The maximal relative transparency, reaching 45 % at 350 nJ cm -2, occurs under resonant excitation of a localized plasmon mode at the strong electrostatic modulation of 2DEG concentration. Transient dynamics reveal ultrafast relaxation times of 15-20 ps, while the effects can be observed at elevated temperatures of up to 150 K. A nonlinear model of plasmonic crystal, based on finite-difference time-domain electrodynamic simulations coupled with viscous hydrodynamic electron transport model, elucidates key nonlinear mechanisms, including near-field effects under metallic gratings, electron heating, plasmon resonance broadening, and redshift. These results demonstrate that even conventional semiconductors such as AlGaN/GaN can achieve nonlinear THz responses comparable to or exceeding those of graphene, showing strong potential for ultrafast THz modulation and nonlinear photonics applications. |
| title | Extreme Terahertz Nonlinearity of AlGaN/GaN-based Grating-Gate Plasmonic Crystals |
| topic | Optics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2503.02562 |